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1M1价格
参考价格：￥0.2692
型号：1M130Z 品牌：Taiwan Semi 备注：这里有1M1多少钱，2024年最近7天走势，今日出价，今日竞价，1M1批发/采购报价，1M1行情走势销售排行榜，1M1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics |  |   | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WATTSURMETIC30SILICONZENERDIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 |  | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WATTSURMETIC30SILICONZENERDIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | | | |
GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WATTSURMETIC30SILICONZENERDIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | | | |
GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WATTSURMETIC30SILICONZENERDIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | | | |
1.0WATTSURMETIC30SILICONZENERDIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | | | |
1.0WATTSURMETIC30SILICONZENERDIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | | | |
GlassPassivatedJunctionSiliconZenerDiode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WATTSURMETIC30SILICONZENERDIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | | | |
GlassPassivatedJunctionSiliconZenerDiode 文件：1.18579 Mbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattsGlassPassivatedJunctionSiliconZenerDiode 文件：626.04 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattGlassPassivatedJunctionSiliconZenerDiodes 文件：279.91 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1W,10V-200VGlassPassivatedJunctionSiliconZenerDiodes 文件：217.66 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：DIODE ZENER 110V 1W DO204AL 分立半导体产品 二极管 - 齐纳 - 单 | Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation |  | | |
封装/外壳：DO-204AL，DO-41，轴向 包装：带盒（TB） 描述：DIODE ZENER 110V 1W DO204AL 分立半导体产品 二极管 - 齐纳 - 单 | Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation | | | |
USBCABLEASSEMBLYCOMMERCIALSTD-APLUGTOMINI-BPLUGSTRT 文件：135.68 Kbytes Page：1 Pages | MolexMolex Incorporated 莫仕美国莫仕公司 |  | | |
1.0WattsGlassPassivatedJunctionSiliconZenerDiode 文件：626.04 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattGlassPassivatedJunctionSiliconZenerDiodes 文件：279.91 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1W,10V-200VGlassPassivatedJunctionSiliconZenerDiodes 文件：217.66 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode 文件：1.18579 Mbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode 文件：1.18579 Mbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattGlassPassivatedJunctionSiliconZenerDiodes 文件：279.91 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1W,10V-200VGlassPassivatedJunctionSiliconZenerDiodes 文件：217.66 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattsGlassPassivatedJunctionSiliconZenerDiode 文件：626.04 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattsGlassPassivatedJunctionSiliconZenerDiode 文件：626.04 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattGlassPassivatedJunctionSiliconZenerDiodes 文件：279.91 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1W,10V-200VGlassPassivatedJunctionSiliconZenerDiodes 文件：217.66 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode 文件：1.18579 Mbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode 文件：1.18579 Mbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattGlassPassivatedJunctionSiliconZenerDiodes 文件：279.91 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1W,10V-200VGlassPassivatedJunctionSiliconZenerDiodes 文件：217.66 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattsGlassPassivatedJunctionSiliconZenerDiode 文件：626.04 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattsGlassPassivatedJunctionSiliconZenerDiode 文件：626.04 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1W,10V-200VGlassPassivatedJunctionSiliconZenerDiodes 文件：217.66 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
1.0WattGlassPassivatedJunctionSiliconZenerDiodes 文件：279.91 Kbytes Page：7 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
GlassPassivatedJunctionSiliconZenerDiode 文件：1.18579 Mbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 |  | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | | | |
UPRExtraPrecisionNetworkResistors 文件：367.34 Kbytes Page：3 Pages | TOKENToken Electronics Industry Co., Ltd. 德通电子德通电子工业有限公司 | | |
1M1产品属性
- 类型
描述
- 型号
1M1
- 制造商
Carling Technologies
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC-台半 |
24+25+/26+27+ |
DO-204 |
236148 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SEC |
97 |
普通 |
|||||
台半 |
24+ |
1A |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
23+ |
N/A |
56800 |
一级代理放心采购 |
||||
TAIWAN |
1809+ |
DO-204 |
16750 |
就找我吧!--邀您体验愉快问购元件! |
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1M1数据表相关新闻
1EDN7550UXTSA1
1EDN7550UXTSA1
2023-7-201EDI40I12AFXUMA1
1EDI40I12AFXUMA1栅极驱动IC
2023-3-11EDI40I12AFXUMA1 全新原装正品 现货
1EDI40I12AFXUMA1
2022-5-161N4001
1N4001，当天发货0755-82732291全新原装现货或门市自取.
2020-9-161N4007
1N4007，全新原装当天发货或门市自取0755-82732291.
2019-9-21N4007RLG公司大量全新现货随时可以发货
正品
2019-3-1
DdatasheetPDF页码索引
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