18A, 650V N-CHANNEL POWER MOSFET

The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) • ≤• 0.5Ω @VGS = 10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 23pF ) \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

Static Drain-Source On-Resistance

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18A, 650V N-CHANNEL POWER MOSFET

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高压MOSFET

18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes Page：4 Pages

18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes Page：4 Pages

18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes Page：4 Pages

18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes Page：4 Pages

18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes Page：4 Pages

18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes Page：4 Pages

Planar Power MOSFET  (N-CH)

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

N-channel Enhanced mode TO-220F/TO-247 MOSFET

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