N-Channel Enhancement Mode Power MOSFET

Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The 18N20 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

N-Channel Enhancement Mode Power MOSFET

Description The 18N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-Channel Enhancement Mode Power MOSFET

Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-CHANNEL ENHANCEMENT MODE POWER MOSF

▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It p

DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

N-Channel Enhancement Mode Power MOSFET

Description The 18N20J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

Fast Switching

• DESCRIPTION • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters, motor drivers, relay drivers

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

500V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

Fast Switching

• FEATURES • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching • APPLICATIONS • Switch mode power supply.

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

Fast Switching

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Capacitive proximity sensors

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Capacitive proximity sensors

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isc N-Channel MOSFET Transistor

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18A竊?00V N-CHANNEL MOSFET

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N-Channel 200 V (D-S) MOSFET

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N-Channel 200V (D-S) MOSFET

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18A, 250V N-CHANNEL POWER MOSFET

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18A, 250V N-CHANNEL POWER MOSFET

文件：180 Kbytes Page：5 Pages

18A, 250V N-CHANNEL POWER MOSFET

文件：180 Kbytes Page：5 Pages

18A, 250V N-CHANNEL POWER MOSFET

文件：180 Kbytes Page：5 Pages

18A, 250V N-CHANNEL POWER MOSFET

文件：180 Kbytes Page：5 Pages

18A, 250V N-CHANNEL POWER MOSFET

文件：180 Kbytes Page：5 Pages

18A, 250V N-CHANNEL POWER MOSFET

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Capacitive proximity sensors

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Capacitive proximity sensors

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400V N-CHANNEL POWER MOSFET

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18A, 400V N-CHANNEL POWER MOSFET

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18A, 400V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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400V N-CHANNEL POWER MOSFET

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18A, 400V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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18A, 400V N-CHANNEL POWER MOSFET

文件：151.29 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：181.05 Kbytes Page：4 Pages

18A, 400V N-CHANNEL POWER MOSFET

文件：151.29 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：181.05 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：181.05 Kbytes Page：4 Pages

400V N-CHANNEL POWER MOSFET

文件：145.54 Kbytes Page：3 Pages

18A, 400V N-CHANNEL POWER MOSFET

文件：151.29 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：181.05 Kbytes Page：4 Pages

18A, 400V N-CHANNEL POWER MOSFET

文件：151.29 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：181.05 Kbytes Page：4 Pages

18A, 400V N-CHANNEL POWER MOSFET

文件：151.29 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

文件：181.05 Kbytes Page：4 Pages

N-CHANNEL POWER MOSFET

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