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型号 功能描述 生产厂家 企业 LOGO 操作
17N80

MOS管

ETC

知名厂家

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

文件:683.83 Kbytes Page:11 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

文件:736.98 Kbytes Page:11 Pages

Infineon

英飞凌

CoolMOS® Power Transistor

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

HiPerFET™ Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL 94 V-0 flammabili

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

HiPerFET™ Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL 94 V-0 flammabili

IXYS

艾赛斯

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

VishayVishay Siliconix

威世威世科技公司

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
16868
优势代理渠道,原装正品,可全系列订货开增值税票
Infineon(英飞凌)
24+
标准封装
9548
原厂渠道供应,大量现货,原型号开票。
INFINEON/英飞凌
24+
TO220F
8540
只做原装正品现货或订货假一赔十!
Infineon
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
infineon
NEW
to-247
18689
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
INFINEON/英飞凌
22+
TO-220F
12245
现货,原厂原装假一罚十!
AUK
25+
TO-220F
880000
明嘉莱只做原装正品现货
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
INFINEON/英飞凌
23+
TO-247
7000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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