MOS管高压

丝印代码：16N65M2；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high effic

丝印代码：16N65M2；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high effic

丝印代码：16N65M2；N-channel 650 V, 0.325 ??typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT??5x6 HV package

文件：947.95 Kbytes Page：16 Pages

丝印代码：16N65AP；16A 650V N-channel enhancement mode field effect transistor

文件：940.32 Kbytes Page：6 Pages

丝印代码：16N65APS；16A 650V N-channel enhancement mode field effect transistor

文件：940.32 Kbytes Page：6 Pages

丝印代码：16N65AF；16A 650V N-channel enhancement mode field effect transistor

文件：940.32 Kbytes Page：6 Pages

156, 650V N-CHANNEL POWER MOSFET

The UTC 16N65K-MT is an N-channel mode power MOSFETusing UTC’s advanced technology to provide customers with planarstripe and DMOS technology. This technology allows a minimumon-state resistance and superior switching performance. It also canwithstand high energy pulse in the avalanche and commutati • RDS(ON)<0.54Ω @ VGS=10V\n• High Switching Speed\n• 100% Avalanche Tested;

16A 650V N-channel enhancement mode field effect transistor

文件：940.32 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：197.24 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：197.24 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：197.24 Kbytes Page：5 Pages

高压MOSFET

N-CHANNEL MOSFET in a TO-220FL Plastic Package

文件：1.01276 Mbytes Page：6 Pages

N-channel TO-220 /TO-220F MOSFET

文件：823.29 Kbytes Page：6 Pages

SiC Schottky Barrier Diode

文件：164 Kbytes Page：5 Pages