位置：首页 > IC中文资料第6972页 > 15C02MH
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
15C02MH | Low-Frequency General-Purpose Amplifier Applications NPN Epitaxial Planar Silicon Transistor Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applications • Low-frequenc | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |   | |
15C02MH | nullBipolar Transistor 15V, 1A, Low VCE(sat) NPN Single MCPH3 Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single MCPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applicati | ONSEMI 安森美半导体 | | |
15C02MH | Low-Frequency General-Purpose Amplifier Applications 文件：471.99 Kbytes Page：6 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | |
nullBipolar Transistor 15V, 1A, Low VCE(sat) NPN Single MCPH3 Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single MCPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applicati | ONSEMI 安森美半导体 | | ||
Low-Frequency General-Purpose Amplifier Applications 文件：471.99 Kbytes Page：6 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
封装/外壳：3-SMD，扁平引线 包装：散装 描述：TRANS NPN 15V 1A MCPH3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
NPN EPITAXIAL SILICON TRANSISTOR NPN Epitaxial Planar Silicon Transistor Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applications • Low-frequency | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3 Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Application | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3 Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Application | ONSEMI 安森美半导体 | |
15C02MH产品属性
- 类型
描述
- 型号
15C02MH
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
Low-Frequency General-Purpose Amplifier Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SC-70 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SS |
23+ |
SOT23-5 |
15000 |
全新原装现货,价格优势 |
|||
FUTURE |
24+ |
BGA |
6980 |
原装现货,可开13%税票 |
|||
IR |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
|||
IR |
N/A |
3 |
|||||
XR |
2406+ |
PLCC |
1850 |
诚信经营!进口原装!量大价优! |
|||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
TOSHIBA/东芝 |
2023+ |
MODULE |
268 |
主打螺丝模块系列 |
|||
SANYO/三洋 |
23+ |
SOT523-3 |
5010 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
三年内 |
1983 |
只做原装正品 |
15C02MH规格书下载地址
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15C02MH数据表相关新闻
15Fx1-254mm
优势渠道
2023-3-1615N20L-TO251T-TG_UTC代理商
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2023-2-21563125-1
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15000瓦的瞬态电压抑制器17至280伏 特点 ☆15000瓦峰值脉冲电源10/1000us能力 ☆波形 ☆玻璃钝化结及塑料包装设备 ☆低增量浪涌电阻 ☆保证高温焊接 ☆快速响应时间 最大额定值 工作温度：-55℃~ +175℃ 储存温度：-55℃~+175℃ 最低15000瓦的峰值脉冲功率的能力上 10/1000us波形 Walts稳定状态功率损耗RL=75℃，铅
2012-11-10
DdatasheetPDF页码索引
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