型号 功能描述 生产厂家 企业 LOGO 操作
13005E

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

STMICROELECTRONICS

意法半导体

SMART DRIVER CONSTANT CURRENT

Description Smart Driver with Plug - Constant Current 950mA Selected - 2.4m cable & Wire By Click plug

EKTOR

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Charger and Switch-mode power supplies

JINGDAO

晶导

good high temperature

文件:4.74422 Mbytes Page:3 Pages

DGNJDZ

南晶电子

NPN Silicon Power Transistors

文件:332.95 Kbytes Page:3 Pages

SEMTECH_ELEC

先之科半导体

Series 800 Vertisocket w/Collet Contacts for Horizontal Mounting

文件:703.96 Kbytes Page:1 Pages

ARIES

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

NPN SILICON TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching

UTC

友顺

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 and Switch-mode power supplies

JINGDAO

晶导

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier FEATURES High breakdown voltage High current capability High switching speed High reliability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

NPN SILICON POWER  TRANSISTORS

UTC

友顺

NPN SILICON POWER TRANSISTOR

文件:168.5 Kbytes Page:4 Pages

UTC

友顺

NPN SILICON POWER TRANSISTOR

文件:168.5 Kbytes Page:4 Pages

UTC

友顺

NPN SILICON POWER TRANSISTOR

文件:168.5 Kbytes Page:4 Pages

UTC

友顺

NPN SILICON POWER TRANSISTOR

文件:168.5 Kbytes Page:4 Pages

UTC

友顺

NPN SILICON POWER TRANSISTOR

文件:168.5 Kbytes Page:4 Pages

UTC

友顺

高反压集成二极管系列(Bvceo:400-600V)

ETC

知名厂家

更新时间:2025-10-2 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
24+
DIP220
10000
ST
0850+
TO-220
65
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HUAJING
14+
TO-220F
50
只做原装正品
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
FAIRCHILD/仙童
TO-220F
22+
6000
十年配单,只做原装
MOLEX/莫仕
24+
32083
原厂现货渠道
HUAJING
24+
TO-220F
43200
郑重承诺只做原装进口现货
ST/意法
23+
TO-220
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
FAIRCHILD/仙童
23+
TO-220F
8400
专注配单,只做原装进口现货
PHI
23+
TO-220
50000
全新原装正品现货,支持订货

13005E数据表相关新闻

  • 130092-0172

    130092-0172

    2023-5-16
  • 12VDC 500mA

    12VDC 500mA

    2023-3-10
  • 12N80L-TO220F1T-TG_UTC代理商

    12N80L-TO220F1T-TG_UTC代理商

    2023-2-16
  • 12V-SB-RGB-5M

    类别 光电器件 LED 照明 - COB,引擎,模块,灯条 制造商 Inspired LED, LLC 系列 - 包装 带卷(TR) 零件状态 有源 类型 LED 引擎 颜色 红色,绿色,蓝色(RGB) CCT (K) - 波长 - 配置 线性灯条,弹性

    2020-12-18
  • 1318917-1/TE

    1318917-1/TE

    2020-4-14
  • 1318305-2原装TE汽车连接器

    只做原装,假一罚十,可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO

    2019-3-13