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丝印代码:13005A;High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

STMICROELECTRONICS

意法半导体

13005A

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

STMICROELECTRONICS

意法半导体

13005A

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Charger and Switch-mode power supplies

JINGDAO

晶导

13005A

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

APPLICATIONS\nEnergy-saving ligh\nElectronic ballasts \nHigh frequency switching power supply\nHigh frequency power transform\nCommonly power amplifierFEATURES\nHigh breakdown voltage\nHigh current capability\nHigh switching speed\nHigh reliability\nRoHS product High breakdown voltage\nHigh current capability\nHigh switching speed\nHigh reliability\nRoHS product;

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

13005A

高反压系列 (Bvceo:400-600V)

JDsemi

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 and Switch-mode power supplies

JINGDAO

晶导

Bipolar Junction Transistor

FEATURES ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast, etc

JINGDAO

晶导

C6Amodul 180° jack

Product specification • modular Cat.6A termination unit RJ45 • mounting version: module, 180° cable feed • solid, one-piece and reusable module housing refined with zinc die-casting • mounting without special tools, strain relief directly snapped on to stuffer cap • migration to 25G-systems w

METZ

C6Amodul 270° jack

Product specification • modular Cat.6A termination unit RJ45 • mounting version: module, 270° cable feed • solid, one-piece and reusable module housing refined with zinc die-casting • mounting without special tools; strain relief directly snapped on to stuffer cap • easy to install connection

METZ

高反压集成二极管系列(Bvceo:400-600V)

JDsemi

NPN SILICON POWER TRANSISTOR

SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

ONSEMI

安森美半导体

POWER TRANSISTORS(4A,300-400V,75W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters. DC-DC conveter, Motor controls, Solenoiid / Relay dri

MOSPEC

统懋

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS These devices are designedfor high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

MOTOROLA

摩托罗拉

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

STMICROELECTRONICS

意法半导体

更新时间:2026-5-16 10:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2450+
TO-220
6885
只做原装正品假一赔十为客户做到零风险!!
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
ST/意法半导体
2021+
TO-220-3
6900
原厂原装,假一罚十
ST原装
24+
TO-126
30980
原装现货/放心购买
ST
24+
TO-220
101125
ST
16+
TO-220
10000
全新原装现货
ST/意法半导体
26+
TO-220-3
8880
原装认准芯泽盛世!
ST
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
ST
2022+
30
全新原装 货期两周
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货

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