3/8 (9.52mm) Sq. Wirewound Trimmers

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Power Surface Mount Schottky Rectifier (200V，120Amp)

175C TJ operation Low forward voltage drop Low reverse leakage current High surge capacities High frequency operation Guaranteed reverse avalanche capability Low profile surface mount package Baseplate: Pure Sn plated; Terminals: Pure Sn plated This is a Pb − Free Device All SMC parts ar

微调电位计

包装：盒 描述：POT WW TRIMMER TERMINAL PINS 电位计，可变电阻器 微调电位计

Power Surface Mount Schottky Rectifier

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肖特基二极管

肖特基二极管

封装/外壳：SPD-3A 包装：卷带（TR） 描述：DIODE SCHOTTKY 200V 120A SPD-3A 分立半导体产品 二极管 - 整流器 - 单

Power Surface Mount Schottky Rectifier

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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