400 Watts - 50 Volts, 4.5ms, 30 Broad Band 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30 duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-mat

封装/外壳：55-KR 包装：卷带（TR） 描述：TRAN, GAN, 1200-1400 MHZ, 400W, 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF/Microwave GaN on SiC Power Devices, Pallets and Modules