200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

Integrated Circuit Phase Lock Loop (PLL) Stereo Decoder

Features: ● Requires No Inductors ● Low External Part Count ● Only Oscillator Frequency Adjustment Necessary ● Integral Stereo/Monaural Switch 75mA Lamp Driving Capability ● Wide Dynamic Range: Typically up to 1.3V(RMS) Composite Input Signal ● Wide Supply Voltage: 8V to 16V ● Excellent Cha

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all “freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control ci

High efficiency DC/DC converter

文件：78.42 Kbytes Page：16 Pages

High efficiency DC/DC converter

文件：78.42 Kbytes Page：16 Pages