400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52Ω@VGS= 10 V * Ultr

11.4A, 400V   N-CHANNEL  POWER MOSFET

The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) = 0.52Ω @VGS = 10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 20 pF ) \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

11.4A, 400V N-CHANNEL POWER MOSFET

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FQP11N40C / FQPF11N40C N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52Ω@VGS= 10 V * Ultr

11.4A, 400V N-CHANNEL POWER MOSFET

The 11N40K-MT uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications. • RDS(ON) < 0.52Ω @VGS = 10 V\n• Avalanche Energy Specified\n• ;

400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52Ω@VGS= 10 V * Ultr

400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52Ω@VGS= 10 V * Ultr

11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes Page：6 Pages

11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes Page：6 Pages

11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes Page：6 Pages

11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes Page：6 Pages

11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes Page：6 Pages

Planar Power MOSFET  (N-CH)

400V N-Channel MOSFET

400V N-Channel MOSFET

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

400V N-Channel MOSFET

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