PROFIBUS Data Double-Ended Cordset: Male straight B-coded black M12

Product Description PROFIBUS Data Double-Ended Cordset: Male straight B-coded black M12 Standard to female straight B-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; PUR violet cable, 2-wires, 0.34 mm²

PVC and Nylon LED Spacers

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包装：散装 描述：PC TEST POINT JACK WHITE 测试与计量 测试点

包装：散装 描述：PC TEST POINT JACK WHITE 测试与计量 测试点

TEST JACKS

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Converted on hot foil

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EV-T2HPCC-DC500A-5,5M50ECBK11 - DC充电枪

CHARX connect professional，HPC DC充电线缆，带冷却车辆充电连接器和冷却电缆，用于使用直流电(DC)为电动汽车(EV) 充电，带可更换的插头外框，配备可更换的DC功率触点，无穿板式连接器，用于四导线测量的单线没有连接并且也不起作用，CCS 2 类，IEC 62196-3-1， 500 A / 1000 V (DC)，菲尼克斯电气标识， 电缆: 5.5 m，黑色，直头

EV-T2HPCC-DC500A-5,5M50ECBK11 - DC charging cable

CHARX connect professional, CCS type 2, HPC DC charging cable, up to 700 A in Boost mode, 500 A permanent, 1000 V DC, with cooled vehicle charging connector and cooled cable, cable: 5.5 m, black, straight, with replaceable mating face frame, with replaceable DC power contacts, without panel fee

TEST JACKS

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PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current capability IO (No