10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Description\nThe HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode • 10A, 400V and 500V\n• TFALL: 1µs, 0.5µs\n• Fast Switching Speeds\n• Anti-Parallel DiodeApplications\n• Motor Drives\n• Protective Circuits;

10A, 12A, 400V and 500V N-Channel IGBTs

Description The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor dri

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel d