10A, 150V, 0.3Ω, N-CHANNEL  POWER MOSFETS

The UTC 10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc. The UTC 10N15 is suitable for switching converters, switching regulators, relay drivers and motor drivers, etc. • RDS(ON)<0.300Ω @VGS=10V, ID=10A \n• High breakdown voltage;

10A, 150V, 0.3廓, N-CHANNEL POWER MOSFETS

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件：221.03 Kbytes Page：4 Pages

10A, 150V, 0.3廓, N-CHANNEL POWER MOSFETS

文件：281.88 Kbytes Page：4 Pages

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件：221.03 Kbytes Page：4 Pages

N-Channel MOSFET uses advanced trench technology

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10A, 150V, 0.3廓, N-CHANNEL POWER MOSFETS

文件：281.88 Kbytes Page：4 Pages

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件：221.03 Kbytes Page：4 Pages

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件：221.03 Kbytes Page：4 Pages

POWER FIELD EFFECT TRANSISTOR

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs

Features ● 10 A, 120V and 150V ● rDS(on) = 0.3Ω ● SOA is Power-Dissipation Limited ● Nanosecond Switching Speeds ● Linear Transfer Characteristics ● High Input Impedance ● Majority Carrier Device

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

N-Channel Enhancement-Mode Power Field-Effect Transistors

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