POWER FIELD EFFECT TRANSISTOR

TOS POWER FET 10 AMPERES RDS(on) = 0.3 OHM 150VOLTS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs

Features ● 10 A, 120V and 150V ● rDS(on) = 0.3Ω ● SOA is Power-Dissipation Limited ● Nanosecond Switching Speeds ● Linear Transfer Characteristics ● High Input Impedance ● Majority Carrier Device

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

N-Channel Enhancement-Mode Power Field-Effect Transistors

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