MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) Applications • Switching Voltage Regulators

SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A (Tc=114°C). • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns. • Low Peak Forward Voltage : 0.52V(Typ.)

SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A (Tc=114°C). • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns. • Low Peak Forward Voltage : 0.52V(Typ.)

FRD - Low Forward Voltage Drop

FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

FAST RECTIFIERS(10A,300-600V)

Ultra Fast Recovery Rectifier Diodes ULTRA FAST RECTIFIERS 10 AMPERES 300 -- 600 VOLTS