Inst, 2 Pr #18 Str BC, XLPE Ins E1,OS, Blk LSZH PE Jkt, 600V TC 90C Dry/Wet SUN RES DIR BUR

Product Description UL Instrumentation, 2 Pair 18AWG (7x26) Bare Copper, XLPE Insulation E1 Color Code,Overall Beldfoil® Shield, Black LSZH PE Outer Jacket, 600V TC 90C Dry/Wet SUN RES DIR BUR

Inst, 2 Pr #18 Str BC, XLPE Ins E1,OS, Blk LSZH PE Jkt, 600V TC 90C Dry/Wet SUN RES DIR BUR

Product Description UL Instrumentation, 2 Pair 18AWG (7x26) Bare Copper, XLPE Insulation E1 Color Code,Overall Beldfoil® Shield, Black LSZH PE Outer Jacket, 600V TC 90C Dry/Wet SUN RES DIR BUR

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

GaAlAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

High Power 2 쨈 4 Antenna Switch MMIC

文件：67.99 Kbytes Page：5 Pages

DC Accurate, Clock-Tunable 5th Order Butterworth Lowpass Filter

文件：317.89 Kbytes Page：12 Pages

DC Accurate, Clock-Tunable 5th Order Butterworth Lowpass Filter

文件：317.89 Kbytes Page：12 Pages