丝印代码：10111ND；14A, 100V N-CHANNEL MOSFET

DESCRIPTION SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withsta

Dual 3?묲nput/3?뭀uput NOR Gate

The MC10111 is designed to drive up to three transmission lines simul− taneously. The multiple outputs of this device also allow the wire “OR”−ing of several levels of gating for minimization of gate and package count. The ability to control three parallel lines from a single point makes the MC10

Dual 3?묲nput/3?뭀uput NOR Gate

The MC10111 is designed to drive up to three transmission lines simul− taneously. The multiple outputs of this device also allow the wire “OR”−ing of several levels of gating for minimization of gate and package count. The ability to control three parallel lines from a single point makes the MC10

6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50 efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 1.5 GHz, 28 Volts

Current-output type sensors with variable integration time function

Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large act

SA series, high-precision,Pt-film thermal sensors.

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