丝印代码：100N650；This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

Features High ruggedness for motor control VCE(sat) positive temperature coefficient Very soft, fast recovery anti-parallel diode Low EMI Maximum junction temperature 175°C Applications PV Inverter UPS Power Welder Haloge n -f r e e

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60AT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60BT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60T7 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

丝印代码：100N60；N-Channel Enhancement Mode Power MOSFET

文件：239.2 Kbytes Page：7 Pages

丝印代码：100N65AG；Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 m廓 (typ., TJ = 25 째C) in an H2PAK-7 package

文件：623.47 Kbytes Page：15 Pages

丝印代码：100N6F7；N-channel 60 V, 4.7 m??typ.,100 A STripFET??F7 Power MOSFET in a D짼PAK package

文件：555.77 Kbytes Page：15 Pages

丝印代码：100N6F7；N-channel 60 V, 4.6 m??typ., 46 A STripFET??F7 Power MOSFET in a TO-220FP package

文件：419.46 Kbytes Page：13 Pages

丝印代码：100N6LF6；N-channel 60 V, 3.3 m廓 typ., 25 A STripFET??VI DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

文件：2.35851 Mbytes Page：15 Pages

PVA Pick-to-Light Array

文件：525.49 Kbytes Page：8 Pages

PVA Pick-to-Light Array

文件：525.49 Kbytes Page：8 Pages

PVA Pick-to-Light Array

文件：525.49 Kbytes Page：8 Pages

Rad-Hard N-channel, 60 V, 80 A Power MOSFET

文件：408.01 Kbytes Page：18 Pages