RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

封装/外壳：1111（2828 公制） 包装：托盘 描述：CAP CER 43PF 500V P90 1111 电容器 陶瓷电容器

封装/外壳：1111（2828 公制） 包装：托盘 描述：CAP CER 43PF 500V P90 1111 电容器 陶瓷电容器

贴片电容(MLCC)

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power LDMOS Transistors

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RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

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