丝印代码：0909NS；n-Channel Power MOSFET

1.Description OptiMOS ™ 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements

n-Channel Power MOSFET

1.Description OptiMOS ™ 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP.

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP.

0.25 Watt SIP4 & DIP8 Single Output

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1 Watt SIP4 & SIP7 Single Output

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1 Watt SIP4 Micro Size Single Output

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