丝印代码：08N80C3；CoolMOSTM Power Transistor

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CoolMOS™ Power Transistor

• New revolutionary high voltage technology\n• High peak current capability\n• Pb-free lead plating; RoHS compliant\n• Ultra low effective capacitances\n• Fully isolated package (2500 VAC; 1 minute);

CoolMOSTM Power Transistor

文件：478.87 Kbytes Page：10 Pages

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

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CoolMOSTM Power Transistor Features New revolutionary high voltage technology

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