丝印代码：0702LS；OptiMOS™ Power-Transistor, 60 V

Features • Ideal for high-frequency switching • Optimized for chargers • 100 avalanche tested • Superior thermal resistance • N-channel, Logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS™ Power-Transistor, 60 V

Features • Ideal for high-frequency switching • Optimized for chargers • 100 avalanche tested • Superior thermal resistance • N-channel, Logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.0 volt max ❏ On resistance guaranteed at VGS= 2, 3, and 5 volts ❏ High input impedance ❏ Low input capacitance —130pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Appl

GaAs SP2T

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Silicon Schottky Barrier Diode

文件：35.06 Kbytes Page：1 Pages

P-Channel Enhancement-Mode Vertical DMOS FETs????

文件：73.76 Kbytes Page：2 Pages