N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.0 volt max ❏ On resistance guaranteed at VGS= 2, 3, and 5 volts ❏ High input impedance ❏ Low input capacitance —130pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Appl

MOSFET, N-Channel Enhancement-Mode, 20V, 1.3 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold - 1.6V max. \nHigh input impedance \nLow input capacitance - 130pF typical \nFast switching speeds \nLow on-resistance guaranteed at VGS = 2, 3, and 5V \nFree from secondary breakdown \nLow input and output leakage;

N-Channel Enhancement-Mode Vertical DMOS FETs

❏ Low threshold\n— 1.0 volt max\n❏ On resistance guaranteed at VGS= 2, 3, and 5 volts\n❏ High input impedance\n❏ Low input capacitance —130pF typical\n❏ Fast switching speeds\n❏ Low on resistance\n❏ Free from secondary breakdown\n❏ Low input and output leakageApplications\n❏ Logic level interfaces\n;

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.0 volt max ❏ On resistance guaranteed at VGS= 2, 3, and 5 volts ❏ High input impedance ❏ Low input capacitance —130pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Appl

N-Channel Enhancement-Mode Vertical DMOS FET

文件：631.12 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：631.12 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：631.12 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：631.12 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：631.12 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：631.12 Kbytes Page：5 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：631.12 Kbytes Page：5 Pages

Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

GaAs SP2T

文件：42.6 Kbytes Page：1 Pages

Silicon Schottky Barrier Diode

文件：35.06 Kbytes Page：1 Pages

P-Channel Enhancement-Mode Vertical DMOS FETs????

文件：73.76 Kbytes Page：2 Pages