丝印代码：05N03LS5；OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance Rusian 0 V6s=4,5 V • Ootimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance « Nuchannel • 100 avalanche tested • Po-free lead plating; RoHS compliant • Halogen-free acoording to IEC61249-2-24

丝印代码：05N03LS5；MOSFET OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance • N-channel • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

丝印代码：05N03LS5；OptiMOSTM5Power-Transistor,30V

Features •Verylowon-resistanceRDS(on)@VGS=4.5V •Optimizedchargesforfastswitching •OptimizedQGD/QGSforinducedturnonruggedness •Superiorthermalresistance •N-channel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

OptiMOSTM 5 Power-Transistor, 30 V

Features • Very low on-resistance Rusian 0 V6s=4,5 V • Ootimized charges for fast switching • Optimized QGD/QGS for induced turn on ruggedness • Superior thermal resistance « Nuchannel • 100 avalanche tested • Po-free lead plating; RoHS compliant • Halogen-free acoording to IEC61249-2-24