丝印代码：044R5ND；178A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This devi

丝印代码：044R5NL5；178A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This devi

丝印代码：044R5NT；178A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This devi

Aluminum Capacitors Radial Standard, High Voltage

文件：394.56 Kbytes Page：6 Pages

Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels

N-CHANNEL POWER MOSFET

文件：21.98 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：21.39 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET

文件：22.51 Kbytes Page：2 Pages

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：14.59 Kbytes Page：2 Pages