isc N-Channel MOSFET Transistor

• DESCRITION • Device for use in a wide variety of applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

isc N-Channel MOSFET Transistor

• DESCRITION • Device for use in a wide variety of applications • FEATURES • Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

isc N-Channel MOSFET Transistor

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Material Content Data Sheet

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