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型号 功能描述 生产厂家 企业 LOGO 操作

SMD Schottky Barrier Diode

Features IO = 200mA VR = 40V - Designed for mounting on small surface. - Extremely thin package. - Low leakage current (IR=0.1uA typ. @VR=10V). - Majority carrier conduction. - Lead-free device Mechanical Data - Case :0603(1608) 1005(2512) standard package, molded plastic. - Termin

ANACHIP

易亨电子

BLP0240

BLP0240

BELLING

上海贝岭

SMD Schottky Barrier Diode

Io = 200 mA VR = 40 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. Mechanical data Case: 1005 (2512) Standard package , molded plastic. Terminals: Gold plated, solderable per MIL-STD-750, method 2026.

COMCHIP

典琦

Advanced Power MOSFET

文件:456.64 Kbytes Page:8 Pages

AUK

Advanced Power MOSFET

文件:453.41 Kbytes Page:8 Pages

AUK

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