SMD Schottky Barrier Diode

Io = 200 mA VR = 40 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. Mechanical data Case: 1005 (2512) Standard package , molded plastic. Terminals: Gold plated, solderable per MIL-STD-750, method 2026.

封装/外壳：1005（2512 公制） 包装：卷带（TR） 描述：DIODE SCHOTTKY 40V 200MA 1005 分立半导体产品 二极管 - 整流器 - 单

SMD Schottky Barrier Diode

Io = 200 mA VR = 40 Volts Features Halogen free. Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,

封装/外壳：1005（2512 公制） 包装：卷带（TR） 描述：DIODE SCHOTTKY 40V 200MA 1005 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Rectifiers Diodes

SMD Schottky Barrier Diode

Features IO = 200mA VR = 40V - Designed for mounting on small surface. - Extremely thin package. - Low leakage current (IR=0.1uA typ. @VR=10V). - Majority carrier conduction. - Lead-free device Mechanical Data - Case :0603(1608) 1005(2512) standard package, molded plastic. - Termin

BLP0240

BLP0240

Advanced Power MOSFET

文件：456.64 Kbytes Page：8 Pages

Advanced Power MOSFET

文件：453.41 Kbytes Page：8 Pages