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丝印代码:021N06N;OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

INFINEON

英飞凌

021N06N

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

INFINEON

英飞凌

Trench Mosfet(60V)

SINOWOLF

Power MOSFET 60 V, 21 m, 27 A, Single N?묬hannel

文件:324.24 Kbytes Page:7 Pages

ONSEMI

安森美半导体

丝印代码:021N06CL;Power MOSFET 60 V, 21 m, 27 A, Single N?묬hannel

文件:324.24 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel

文件:202.65 Kbytes Page:6 Pages

ONSEMI

安森美半导体

丝印代码:021N06CL;MOSFET ??Power, Single N-Channel

文件:202.65 Kbytes Page:6 Pages

ONSEMI

安森美半导体

021N06N产品属性

  • 类型

    描述

  • Device VGS(V):

    20

  • Device ID(A) 25℃:

    30

  • Device Ron(mQ) Max:

    21

  • Device Qg (nC) Typ:

    20

  • Device Ciss (pF) Typ:

    1200

  • Vgs(th) Max:

    3

  • Tj:

    -55-150

  • Package:

    DFN-5x6

更新时间:2026-5-23 17:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
TO-263
50000
全新原装正品现货,支持订货
INFINEON/英飞凌
2450+
TO-263
8850
只做原装正品假一赔十为客户做到零风险!!
INFINEO
22+
TO-263
20000
公司只做原装 品质保障
VBsemi
25+
TO263
9000
只做原装正品 有挂有货 假一赔十
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
Infineon
20+
NA
65790
原装优势主营型号-可开原型号增税票
INFINEON/英飞凌
2447
SOT263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
INFINEON
23+
8000
只做原装现货
INFINEON
23+
7000
Infineon(英飞凌)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

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