丝印代码：00010000；50 V, 100 mA NPN general-purpose transistors

General description NPN general-purpose transistors in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Leadless ultra small SMD plastic package ■ Power dissipation comparable to SOT23 ■ Low package height of 0.37 mm ■ AEC

丝印代码：00010000；50 V, 100 mA NPN general-purpose transistors

Features and benefits * Leadless ultra small SMD plastic package * Power dissipation comparable to SOT23 * Low package height of 0.37 mm * AEC-Q101 qualified

丝印代码：000100；45 V, 200 mA NPN/NPN general-purpose transistor

Features and benefits • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified • Low package height of 0.37 mm

丝印代码：00010111；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

丝印代码：00010101；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

丝印代码：00010110；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

丝印代码：00010111；30 V, N-channel Trench MOSFET

description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic

丝印代码：00010010；30 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technol

丝印代码：000101；60 V, dual N-channel Trench MOSFET

文件：743.47 Kbytes Page：17 Pages

丝印代码：00010000；40 V, 2 A low VF MEGA Schottky barrier rectifier

文件：703.7 Kbytes Page：15 Pages

丝印代码：000100；20 V, P-channel Trench MOSFET

文件：740.73 Kbytes Page：15 Pages

EPIC® SIGNAL M23 C2 17 Pin

Description  Circular connectors for servo cables and encoder  Quick and easy separation of the connection from both sides of the wall  For the connection of two preassembled M23 D6 cable connectors

包装：散装 描述：0001030150

包装：散装 描述：0001030150

VX_00010 VSS Monitoring Compatible Transceiver SFP 10GBase-SR (850nm, MMF, 300m, DOM)

Features ATGBICS VX_00010 10GBase-SR supports a distance of up to 300m over multi-mode fibre (MMF) using a wavelength of 850nm via an LC connector. Digital optical monitoring (DOM) support is also present enabling real-time monitoring of the parameters of the fibre optic transceiver. Our produc

15W, Universal Input, Single Output, Isolated Converter with TOP233Y

文件：518.85 Kbytes Page：24 Pages

MODEL PT - PRESSURE TRANSMITTER

文件：169.11 Kbytes Page：1 Pages

SURGE ARRESTOR MODULE

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5 W 6.8 ??390 VOLTS ZENER DIODES

文件：204.54 Kbytes Page：3 Pages