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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR |  |   | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics |  | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM 文件：873.01 Kbytes Page：19 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM 文件：873.01 Kbytes Page：19 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM 文件：873.01 Kbytes Page：19 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
包装：散装 描述：IC AMP CLASS 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM 文件：873.01 Kbytes Page：19 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM 文件：873.01 Kbytes Page：19 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
封装/外壳：28-DIP（0.600"，15.24mm） 包装：托盘 描述：IC EEPROM 256KBIT PARALLEL 28DIP 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256k,32kx8-Bit,5V,ByteAlterableEEPROM 文件：873.01 Kbytes Page：19 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
25632Kx8HighSpeedParallelEEPROMs Description TheAT28HC256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,theAT28HC256offersaccesstimesto70nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 |  | | |
25632Kx8HighSpeedParallelEEPROMs Description TheAT28HC256isahigh-performanceelectricallyerasableandprogrammablereadonlymemory.Its256Kofmemoryisorganizedas32,768wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,theAT28HC256offersaccesstimesto70nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | |
X28HC256P产品属性
- 类型
描述
- 型号
X28HC256P
- 制造商
Intersil Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XICOR |
20+ |
DIP28 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
OKI |
23+ |
NA/ |
3278 |
原厂直销,现货供应,账期支持! |
|||
XICOR |
11+ |
DIP |
431 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
XICOR |
1822+ |
DIP28 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
XICOR |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
|||
XICOR |
2020+ |
DIP |
431 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INTERSIL |
22+ |
原装 |
5000 |
绝对原装自家现货!真实库存!欢迎来电! |
|||
XICOR |
DIP |
8650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
XICOR |
23+ |
DIP-28 |
90000 |
只做原装 全系列供应 价格优势 可开增票 |
|||
XICOR |
23+ |
DIP |
18000 |
X28HC256P芯片相关品牌
X28HC256P规格书下载地址
X28HC256P参数引脚图相关
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- X25SG
X28HC256P数据表相关新闻
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X3100是一个使用电池的保护和监控IC包组成的4个系列的锂离子电池细胞。X3101是设计工作在3个电池的应用。这两款器件提供内部的过充电，过放电，和过电流保护电路，内部一个内部稳压器，EEPROM存储器，控制外部FET器件的内部驱动电路电池充电，放电，电池电压平衡。过充电，过放电，过电流阈值居住在内部EEPROM存储器寄存器通过使用一个3MHz的软件独立选择SPI串行接口。检测和时间延迟可以也可单独不同的使用外部电容器。使用了一个内部模拟多路复用器，X3100或X3101允许电池参数，如电池电压和电流（使用一个检测电阻器）被监视外部由一个单独的微控制器与A/D转换。此微控制器上的软件实
2012-12-29
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