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X28HC256价格
参考价格：￥119.3280
型号：X28HC256SIZ-90 品牌：Intersil 备注：这里有X28HC256多少钱，2024年最近7天走势，今日出价，今日竞价，X28HC256批发/采购报价，X28HC256行情走势销售排行榜，X28HC256报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
X28HC256 | 5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR |  |   |
X28HC256 | 5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
X28HC256 | 256k,32kx8-Bit,5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformance CMOS32kx8EEPROM.ItisfabricatedwithIntersil’s proprietary,texturedpolyfloatinggatetechnology,providinga highlyreliable5Vonlynonvolatilememory. TheX28HC256supportsa128-bytepagewriteoperation, effectivelyproviding | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
X28HC256 | 256k,32kx8-Bit,5V,ByteAlterableEEPROM 文件：873.01 Kbytes Page：19 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
X28HC256 | 5V,ByteAlterableEEPROM 文件：410.17 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics |  | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM 5V,ByteAlterableEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory Features •Accesstime:70ns •Simplebyteandpa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | | |
LOWPOWERCMOSEEPROMwithhi-speedpagewritecapability256KEEPROM TheX28HC256isasecondgenerationhighperformanceCMOS32kx8EEPROM.ItisfabricatedwithIntersil’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Vonlynonvolatilememory.TheX28HC256supportsa128-bytepagewriteoperation,effectivelyprovidinga24µ | ROCHESTER Rochester Electronics | | | |
5Volt,ByteAlterableE2PROM DESCRIPTION TheX28HC256isasecondgenerationhighperformanceCMOS32Kx8E2PROM.ItisfabricatedwithXicor’sproprietary,texturedpolyfloatinggatetechnology,providingahighlyreliable5Voltonlynonvolatilememory. FEATURES •AccessTime:70ns •SimpleByteandPageWrite —Si | Xicor XICOR | | |
X28HC256产品属性
- 类型
描述
- 型号
X28HC256
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5V, Byte Alterable EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
2016+ |
PLCC32 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
XICOR |
2020+ |
PLCC32 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INTERSIL |
1822+ |
SOP28 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INTERSIL |
22+ |
原装 |
5000 |
绝对原装自家现货!真实库存!欢迎来电! |
|||
XICOR |
2021+ |
LCC |
1600 |
自家库存,百分之百原装 |
|||
XICOR |
15+ |
PGA |
70 |
原装正品 专营军工 |
|||
XICOR |
N/A |
N/A |
100 |
军工品,原装正品 |
|||
XICOR |
23+ |
DIP |
18000 |
||||
XICOR |
21+ |
LCC32 |
360 |
十年专营,原装现货,假一赔十 |
|||
INTERSIL |
22+23+ |
DIP |
26304 |
绝对原装正品全新进口深圳现货 |
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- X-2629-TWT-R
- X25UFG
- X25SG
- X24-019WNC
- X24-019PKI-RA
- X24-019PKC-RA
- X24-019NSC
- X24-009WNI
- X24-009WNC
- X24-009PKI-RA
- X24-009PKC-UA
- X24-009PKC-RA
- X24-009NSC
- X2225CR-437W
- X22205CAAK
X28HC256数据表相关新闻
X3C17A1-03WS
进口代理
2022-7-19X25UFG 全套的高压二极管
最新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-19X308032768KGB2SC
属性参数值 商品目录圆柱体晶振 频率公差±10ppm 负载电容值12.5pF 主频32.768KHz 晶振类型圆柱晶振
2020-9-17X25020SI-3.0，X25020ST4，X25057MI-1.8，X25057MI-2.7T1，X25057SI-2.7T4
X25020SI-3.0，X25020ST4，X25057MI-1.8，X25057MI-2.7T1，X25057SI-2.7T4
2020-3-29X24320P1.8，微处理器控制器，存储器，运放放大器，音频放大器，传感器，深圳兴中扬电子
X24320P1.8，微处理器控制器，存储器，运放放大器，音频放大器，传感器，深圳兴中扬电子
2019-12-2X3100V28-3或4芯锂离子电池保护和监控点器集成电路
X3100是一个使用电池的保护和监控IC包组成的4个系列的锂离子电池细胞。X3101是设计工作在3个电池的应用。这两款器件提供内部的过充电，过放电，和过电流保护电路，内部一个内部稳压器，EEPROM存储器，控制外部FET器件的内部驱动电路电池充电，放电，电池电压平衡。过充电，过放电，过电流阈值居住在内部EEPROM存储器寄存器通过使用一个3MHz的软件独立选择SPI串行接口。检测和时间延迟可以也可单独不同的使用外部电容器。使用了一个内部模拟多路复用器，X3100或X3101允许电池参数，如电池电压和电流（使用一个检测电阻器）被监视外部由一个单独的微控制器与A/D转换。此微控制器上的软件实
2012-12-29
DdatasheetPDF页码索引
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