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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
X28C010D | 5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Protectsdataagainstsystemlevelinadvertentwrites TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM Features •Accesstime:120ns •Simplebyteandpagewrite -Single5Vsupply -NoexternalhighvoltagesorVPPcontrol circuits -Self-timed •Noerasebeforewrite •Nocomplexprogrammingalgorithms •Noovereraseproblem •LowpowerCMOS -Active:50mA -Standby:500μA •Software | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
5Volt,ByteAlterableEEPROM TheIntersilX28C010/X28HT010isa128Kx8EEPROM,fabricatedwithIntersilsproprietary,highperformance,floatinggateCMOStechnology.LikeallIntersilprogrammablenon-volatilememories,theX28C010/X28HT010isa5Vonlydevice.TheX28C010/X28HT010featurestheJEDECapprovedpinoutforb | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR |  | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5Volt,ByteAlterableE2PROM 文件：127.06 Kbytes Page：25 Pages | Xicor XICOR | | | |
5V,ByteAlterableEEPROM 文件：440.12 Kbytes Page：20 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
X28C010D产品属性
- 类型
描述
- 型号
X28C010D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5 Volt, Byte Alterable EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XICOR |
2020+ |
DIP-32 |
60 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
XILINX |
22+ |
CDIP |
2000 |
十年沉淀唯有原装 |
|||
Xicor |
8 |
公司优势库存 热卖中!! |
|||||
XICOR |
23+ |
DIP32 |
30000 |
代理全新原装现货,价格优势 |
|||
XICOR |
22+ |
CDIP |
12245 |
现货,原厂原装假一罚十! |
|||
XICOR |
23+ |
CDIP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
XICOR |
2021+ |
DIP |
1600 |
自家库存,百分之百原装 |
|||
23+ |
N/A |
46580 |
正品授权货源可靠 |
||||
XICOR |
专业铁帽 |
CDIP32 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
XICOR |
23+ |
CDIP |
5000 |
原装正品,假一罚十 |
X28C010D芯片相关品牌
X28C010D规格书下载地址
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属性参数值 商品目录圆柱体晶振 频率公差±10ppm 负载电容值12.5pF 主频32.768KHz 晶振类型圆柱晶振
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X25020SI-3.0，X25020ST4，X25057MI-1.8，X25057MI-2.7T1，X25057SI-2.7T4
2020-3-29X24320P1.8，微处理器控制器，存储器，运放放大器，音频放大器，传感器，深圳兴中扬电子
X24320P1.8，微处理器控制器，存储器，运放放大器，音频放大器，传感器，深圳兴中扬电子
2019-12-2X3100V28-3或4芯锂离子电池保护和监控点器集成电路
X3100是一个使用电池的保护和监控IC包组成的4个系列的锂离子电池细胞。X3101是设计工作在3个电池的应用。这两款器件提供内部的过充电，过放电，和过电流保护电路，内部一个内部稳压器，EEPROM存储器，控制外部FET器件的内部驱动电路电池充电，放电，电池电压平衡。过充电，过放电，过电流阈值居住在内部EEPROM存储器寄存器通过使用一个3MHz的软件独立选择SPI串行接口。检测和时间延迟可以也可单独不同的使用外部电容器。使用了一个内部模拟多路复用器，X3100或X3101允许电池参数，如电池电压和电流（使用一个检测电阻器）被监视外部由一个单独的微控制器与A/D转换。此微控制器上的软件实
2012-12-29
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