位置：首页 > IC中文资料第4188页 > VS-GA100TS60SFPBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VS-GA100TS60SFPBF | Optimizedforhardswitchingspeed FEATURES •StandardspeedPTIGBTtechnology •Optimizedforhardswitchingspeed •FREDPt®antiparalleldiodeswithfastrecovery •Verylowconductionlosses •Al2O3DBC •ULapprovedfileE78996 •Designedforindustriallevel •Materialcategorization:fordefinitionsofcompliancepl | VishayVishay Siliconix 威世科技 |  |   |
VS-GA100TS60SFPBF | ?쏦alf-Bridge??IGBTINT-A-PAK,(StandardSpeedIGBT),100A FEATURES •StandardspeedPTIGBTtechnology •Optimizedforhardswitchingspeed •FREDPt®antiparalleldiodeswithfastrecovery •Verylowconductionlosses •Al2O3DBC •ULapprovedfileE78996 •Designedforindustriallevel •Materialcategorization:fordefinitionsofcompliance p | VishayVishay Siliconix 威世科技 | | |
VS-GA100TS60SFPBF | 封装/外壳：INT-A-Pak 包装：盒 描述：IGBT MOD 600V 220A INT-A-PAK 分立半导体产品 晶体管 - IGBT - 模块 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | |
?쏦alf-Bridge??IGBTINT-A-PAK,(StandardSpeedIGBT),100A FEATURES •StandardspeedPTIGBTtechnology •Optimizedforhardswitchingspeed •FREDPt®antiparalleldiodeswithfastrecovery •Verylowconductionlosses •Al2O3DBC •ULapprovedfileE78996 •Designedforindustriallevel •Materialcategorization:fordefinitionsofcompliance p | VishayVishay Siliconix 威世科技 | | | |
StandardSpeedIGBT Features •StandardSpeedPTIgbtTechnology •FredPTAntiparalleldiodeswithFastrecovery •VeryLowConductionLosses •Al2O3DBC •ULPending Benefits •Optimizedforhighcurrentinverterstages(ACTIGweldingmachines) •Directmountingtoheatsink •Hardswitchingoperationfreq | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | | |
Half-BridgeIGBTINT-A-PAK(StandardSpeedIGBT),100A FEATURES •StandardspeedPTIGBTtechnology •Optimizedforhardswitchingspeed •FREDPt®antiparalleldiodeswithfastrecovery •Verylowconductionlosses •Al2O3DBC •ULapprovedfileE78996 •Designedforindustriallevel •Materialcategorization:fordefinitionsofcompliancepl | VishayVishay Siliconix 威世科技 | | | |
HALF-BRIDGEIGBTINT-A-PAKStandardSpeedIGBT Features •Generation4StandardSpeedIGBTTechnology •QuietIRAntiparalleldiodeswithFastSoftrecovery •VeryLowConductionLosses •IndustryStandardPackage •AluminumNitrideDBC •ULapproved(fileE78996) Benefits •Optimizedforhighcurrentinverterstages(ACTIGweldingmac | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HALF-BRIDGEIGBTINT-A-PAK Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystandardpackage •ULrecognitionpending •Generation4IGBTte | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HALF-BRIDGEIGBTINT-A-PAK 文件：216.11 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
VS-GA100TS60SFPBF产品属性
- 类型
描述
- 型号
VS-GA100TS60SFPBF
- 功能描述
IGBT 模块 1200 Volt 100 Amp
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
Vishay(威世) |
23+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Vishay General Semiconductor - |
23+ |
标准封装 |
2000 |
全新原装正品现货直销 |
|||
VishaySemiconductorDiode |
2019+ |
DualINT-A-PAK |
65500 |
原装正品货到付款,价格优势! |
|||
Vishay Semiconductor Diodes Di |
22+ |
INTAPAK |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
ROHS |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
VISHAY/威世 |
23+ |
SOT-227-4 |
25500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|||
VishaySemiconductorDiode |
23+ |
IGBT600V400ASOT227 |
1714 |
专业代理销售半导体模块,能提供更多数量 |
|||
Vishay(威世) |
23+ |
SOT-227-4 |
372 |
进口原装假一赔十可开增值票 |
|||
VISHAY/威世 |
22+ |
SOT-227-4 |
9600 |
原装现货,优势供应,支持实单! |
VS-GA100TS60SFPBF芯片相关品牌
VS-GA100TS60SFPBF规格书下载地址
VS-GA100TS60SFPBF参数引脚图相关
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