位置：首页 > IC中文资料第11712页 > VF20120S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VF20120S | High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE2002/96/EC •Haloge | VishayVishay Siliconix 威世科技 |  |   |
VF20120S | High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技 | | |
VF20120S | High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：162.33 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技 | | | |
HighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | | | |
HighVoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD2 | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,per JESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandin accordancetoWEEE2002/96/EC •Haloge | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技 | | | |
HighVoltageTrenchMOSBarrierSchottkyRectifier UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A UltraLowVF=0.54VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：75.51 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
HighVoltageTrenchMOSBarrierSchottkyRectifier 文件：150.35 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：162.33 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 120V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：164.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：160.88 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：78.37 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：78.37 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：75.41 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：162.45 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：160.88 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
High-VoltageTrenchMOSBarrierSchottkyRectifier 文件：78.37 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
1200VαSiCSiliconCarbideSchottkyBarrierDiode Features •ProprietaryαSiCSchottkyBarrierDiodetechnology •Negligiblereverserecoverycurrent •Maximumoperatingjunctiontemperatureof175°C •Improvedswitchinglossesvs.Sibipolardiodes •Positivetemperaturecoefficientforeaseofparalleling Applications RenewableIndustr | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | | |
LOWVFSCHOTTKYRECTIFIER 文件：52.63 Kbytes Page：2 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 |  | | |
LOWVFSCHOTTKYRECTIFIER 文件：71.1 Kbytes Page：4 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
Ultralowforwardvoltagedrop,lowpowerloss 文件：98.01 Kbytes Page：4 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
Ultralowforwardvoltagedrop,lowpowerloss 文件：67.95 Kbytes Page：4 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | |
VF20120S产品属性
- 类型
描述
- 型号
VF20120S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2020+ |
TO-220F |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY |
0731+ |
TO220F |
99 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
23+ |
N/A |
30350 |
正品授权货源可靠 |
||||
VISHAY |
23+ |
TO-220 |
8600 |
全新原装现货 |
|||
VISHAY/威世 |
23+ |
NA/ |
3298 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VISHAY原装 |
19+ |
TO-220F |
9860 |
一级代理 |
|||
VISHAY/威世 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
VISHAY原装 |
22+23+ |
TO-220F |
23890 |
绝对原装正品全新进口深圳现货 |
|||
TH/韩国太虹 |
2048+ |
TO-220F |
9851 |
只做原装正品现货!或订货假一赔十! |
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DdatasheetPDF页码索引
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