iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=46A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

StandardSizePushbuttons

GeneralSpecifications ElectricalCapacity(ResistiveLoad) PowerLevel(silver):3A@125VACor3A@250VACor3A@30VDC LogicLevel(gold):0.4VAmaximum@28VAC/DCmaximum (ApplicableRange0.1mA~0.1A@20mV~28V) Note:FindadditionalexplanationofoperatingrangeinSupplements

Function/ArbitraryWaveformGenerator

Maximumoutputfrequency:200MHz,160MHz,100MHz,60MHz 500MSa/ssamplerate,14bitverticalresolution Dualchanneloutputswithidenticalperformance 2ppmhigh-frequencystability -115dBc/Hzlowphasenoise Versatileanaloganddigitalmodulationfunctions 150built-inwaveforms 7digits/

30VN-ChannelAlphaMOS

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CommonModeFilterwithESDProtection

文件：849.53 Kbytes Page：11 Pages