UMZ1N晶体管资料

  • UMZ1N别名:UMZ1N三极管、UMZ1N晶体管、UMZ1N晶体三极管

  • UMZ1N生产厂家

  • UMZ1N制作材料:Si-N/P

  • UMZ1N性质:表面帖装型 (SMD)

  • UMZ1N封装形式:贴片封装

  • UMZ1N极限工作电压:50V

  • UMZ1N最大电流允许值:0.1A

  • UMZ1N最大工作频率:180MHZ

  • UMZ1N引脚数:6

  • UMZ1N最大耗散功率

  • UMZ1N放大倍数

  • UMZ1N图片代号:H-23

  • UMZ1Nvtest:50

  • UMZ1Nhtest:180000000

  • UMZ1Natest:.1

  • UMZ1Nwtest:0

  • UMZ1N代换 UMZ1N用什么型号代替

UMZ1N价格

参考价格:¥0.1601

型号:UMZ1NT1G 品牌:ONSemi 备注:这里有UMZ1N多少钱,2024年最近7天走势,今日出价,今日竞价,UMZ1N批发/采购报价,UMZ1N行情走势销售排行榜,UMZ1N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
UMZ1N

General purpose transistor

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
UMZ1N

Multi-Chip TRANSISTOR

FEATURES PowerdissipationPCM:150mW(Tamb=25℃) CollectorcurrentICM:150/-150mA Collector-basevoltageV(BR)CBO:60/-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
UMZ1N

GENERAL PURPOSE TRANSISTOR

DUALTRANSISTOR DESCRIPTION TheUTCUMZ1Nisadualtransistor,includinganNPNtransistorandaPNPtransistor.ItusesUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(NPN:hFE>120@VCE=6V,IC=1mA;PNP:hFE>120@VCE=-6V,IC=-1m

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
UMZ1N

DUAL TRANSISTOR (NPNPNP)

DUALTRANSISTOR(NPN+PNP) DESCRIPTION Siliconepitaxialplanartransistor FEATURES ●2SA1037AKand2SC2412Karehousedindependentlyinapackage ●Transistorelementsindependent,eliminatinginterference ●Mountingcostandareacanbecutinhalf

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
UMZ1N

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPN/PNPDuals(Complimentary) Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. WedeclarethatthematerialofproductcompliancewithRoHS

FS

First Silicon Co., Ltd

FS
UMZ1N

Digital Transistors (Built-in Resistors)

DESCRIPTION Siliconepitaxialplanartransistor FEATURES 2SA1037AKand2SC2412Karehousedindependently inapackage Transistorelementsindependent,eliminatinginterference Mountingcostandareacanbecutinhalf

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
UMZ1N

General purpose transistor (dual transistors)

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
UMZ1N

Silicon Epitaxial Planar

FEATURES •2SA1037AKand2SC2412Karehousedindependentlyinapackage. •Transistorelementsindependent,eliminatinginterference. •Mountingcostandareacanbecutinhalf.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
UMZ1N

Dual Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •2SA1037AKand2SC2412Karehousedindependentlyinapackage. •Mountingcostandareacanbecutinhalf. •Transistorelementsindependent,eliminatinginterference. •LeadFreeFinish/RoHSCompliant(PSuffixdesignates

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
UMZ1N

General purpose transistor

FEATURES ●Botha2SA1037AKchipand2SC2412KchipinSOT-363package. ●Mountingcostandareacanbecutinhalf. ●Transistorelementsareindependent,eliminatinginterference. APPLICATIONS ●NPN/PNPepitaxialplanarsilicontransistor.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
UMZ1N

General purpose transistor (dual transistors)

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
UMZ1N

Dual Transistors

文件:522.28 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

GENERAL PURPOSE TRANSISTOR

DUALTRANSISTOR DESCRIPTION TheUTCUMZ1Nisadualtransistor,includinganNPNtransistorandaPNPtransistor.ItusesUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(NPN:hFE>120@VCE=6V,IC=1mA;PNP:hFE>120@VCE=-6V,IC=-1m

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

GENERAL PURPOSE TRANSISTOR

DUALTRANSISTOR DESCRIPTION TheUTCUMZ1Nisadualtransistor,includinganNPNtransistorandaPNPtransistor.ItusesUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(NPN:hFE>120@VCE=6V,IC=1mA;PNP:hFE>120@VCE=-6V,IC=-1m

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

Complementary Dual General Purpose Amplifier Transistor

Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Dual General Purpose Amplifier Transistor

Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Dual General Purpose Amplifier Transistor

ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A ESDRating−MachineModel:C •NSVPrefixf

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

General purpose transistor (dual transistors)

Features 1)Botha2SA1037AKchipand2SC2412KchipinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure NPN/

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Dual Transistors

文件:522.28 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Silicon Epitaxial Planar Power Management

文件:1.13212 Mbytes Page:4 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

GENERAL PURPOSE DUAL TRANSISTOR

文件:95.7 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

GENERAL PURPOSE DUAL TRANSISTOR

文件:95.7 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

GENERAL PURPOSE DUAL TRANSISTOR

文件:95.7 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

Complementary Dual General Purpose Amplifier Transistor

文件:72.41 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Dual General Purpose Amplifier Transistor

文件:72.41 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UMZ1N产品属性

  • 类型

    描述

  • 型号

    UMZ1N

  • 制造商

    ROHM Semiconductor

  • 功能描述

    Bipolar Junction Transistor, Pair, Complementary, SOT-363

更新时间:2024-5-21 18:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
23+
SC-88
3022
原厂订货渠道,支持BOM配单一站式服务
SXSEMI
23+
SOT363
900000
原装进口特价
长电
2021
SOT-363
99000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ROHM/罗姆
22+
SOT363
600000
航宇科工半导体-央企优秀战略合作伙伴!
ROHM
1742+
SOT363
98215
只要网上有绝对有货!只做原装正品!
ROHM(罗姆)
22+
SOT-363
45000
100%公司原装现货,欢迎加Q微信咨询
ROHM
2020+
NA
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
ROHM
23+
SOT363
12335
ON/安森美
21+
NA
3922
只做原装,假一罚十
ROHM
23+
SOT363
4500
全新原装、诚信经营、公司现货销售!

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