UMT晶体管资料

  • UMT1006别名:UMT1006三极管、UMT1006晶体管、UMT1006晶体三极管

  • UMT1006生产厂家

  • UMT1006制作材料:Si-NPN

  • UMT1006性质

  • UMT1006封装形式

  • UMT1006极限工作电压:300V

  • UMT1006最大电流允许值:10A

  • UMT1006最大工作频率:<1MHZ或未知

  • UMT1006引脚数

  • UMT1006最大耗散功率:100W

  • UMT1006放大倍数

  • UMT1006图片代号:NO

  • UMT1006vtest:300

  • UMT1006htest:999900

  • UMT1006atest:10

  • UMT1006wtest:100

  • UMT1006代换 UMT1006用什么型号代替:3DK308A,

UMT价格

参考价格:¥0.3850

型号:UMT0G101MDD 品牌:Nichicon 备注:这里有UMT多少钱,2024年最近7天走势,今日出价,今日竞价,UMT批发/采购报价,UMT行情走势销售排行榜,UMT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
UMT

Surface Mount Fuse, 10.1 x 3 mm, Time-Lag T, 250 VAC, 125 VDC

文件:546.75 Kbytes Page:3 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

General Purpose Transistor (Isolated Dual Transistors)

Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Dual Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Two2SA1037AKchipsinapackage •MountingpossiblewithSOT-363automaticmountingmachines. •Transistorelementsareindependent,eliminatinginterference. •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHS

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

-0.15A , -60V Dual PNP General Purpose Transistors

FEATURES ●Two2SA1037AKchipsinapackage. ●MountingpossiblewithSOT-363automaticmountingmachines. ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareacanbecutinhalf.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

Dual General Purpose Transistors

PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

FS

First Silicon Co., Ltd

FS

General Purpose Transistor (Isolated Dual Transistors)

Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

DUAL TRANSISTOR (PNPPNP)

DUALTRANSISTOR(PNP+PNP) FEATURES ●Two2SA1037AKchipsinapackage ●MountingpossiblewithSOT-363automaticmountingmachines. ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareabecutinhalf.

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

General Purpose Transistor

Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

General Purpose Transistor (Isolated Dual Transistors)

Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

GENERAL PURPOSE TRANSISTOR

DESCRIPTION TheUTCUMT1Nisadualtransistor,includingtwoPNPtransistors.ItusesUTC’sadvancedtechnologytoprovidethecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(hFE>120@VCE=-6V,IC=-1mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

GENERAL PURPOSE TRANSISTOR

DESCRIPTION TheUTCUMT1Nisadualtransistor,includingtwoPNPtransistors.ItusesUTC’sadvancedtechnologytoprovidethecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(hFE>120@VCE=-6V,IC=-1mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

GENERAL PURPOSE TRANSISTOR

DESCRIPTION TheUTCUMT1Nisadualtransistor,includingtwoPNPtransistors.ItusesUTC’sadvancedtechnologytoprovidethecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(hFE>120@VCE=-6V,IC=-1mA)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

General Purpose Transistor

Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Dual Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Two2SA1037AKchipsinapackage •MountingpossiblewithSOT-363automaticmountingmachines. •Transistorelementsareindependent,eliminatinginterference. •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHS

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPN Medium Power Transistor (Switching)

Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPN Medium Power Transistor (Switching)

Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPN Medium Power Transistor (Switching)

Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS

DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon

ClareClare Inc.

Clare Inc.

Clare

PNP Medium Power Transistor (Switching)

Features 1)BVCEO

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNP Medium Power Transistor (Switching)

Features 1)BVCEO

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNP Medium Power Transistor (Switching)

Features 1)BVCEO

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

General purpose (dual transistors)

Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

General purpose (dual transistors)

Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

General purpose (dual transistors)

Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

General purpose (dual transistors)

Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPN General Purpose Transistor

Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPN General Purpose Transistor

Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPN General Purpose Transistor

Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNP General Purpose Transistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNP General Purpose Transistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNP General Purpose Transistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNP General Purpose Transistor

Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

NPN Medium Power Transistor

•Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT4403/SST4403/MMST4403/PN4403.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNP Medium Power Transistor (Switching)

Features 1)BVCEO

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Power management

Features 1)BoththeDTA143XchipandDTC144EchipinaEMT orUMTorSMTpackage. 2)Idealforpowerswitchcircuits. 3)Mountingcostandareacanbecutinhalf. Structure Epitaxialplanartype NPN/PNPsilicontransistor(Built-inresistortype.)

TGS

Tiger Electronic Co.,Ltd

TGS

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

封装/外壳:径向,Can 包装:散装 描述:CAP ALUM 100UF 20% 4V RADIAL 电容器 铝电解电容器

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

封装/外壳:径向,Can 包装:散装 描述:CAP ALUM 100UF 20% 4V RADIAL 电容器 铝电解电容器

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

ALUMINUM ELECTROLYTIC CAPACITORS

文件:87.45 Kbytes Page:1 Pages

nichiconNichicon

尼吉康尼吉康株式会社

nichicon

UMT产品属性

  • 类型

    描述

  • 型号

    UMT

  • 制造商

    SCHURTER

  • 制造商全称

    Schurter Inc.

  • 功能描述

    Surface Mount Fuse, 10.1 x 3 mm, Time-Lag T, 250 VAC, 125 VDC

更新时间:2024-5-20 18:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
23+
SOT-323
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
ROHM/罗姆
21+
SOT-323
60000
绝对原装正品现货,假一罚十
Micro Commercial Co
24+
6-TSSOP,SC-88,SOT-363
30000
晶体管-分立半导体产品-原装正品
ROHM(罗姆)
22+
SOT-363
45000
100%公司原装现货,欢迎加Q微信咨询
ROHM
21+
SOT-363
21000
全新原装 鄙视假货15118075546
ROHM
21+
SOT323
48000
全新、原装、现货
ROHM
SOT-363
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
NICHICON
23+
DIP
4000
原装正品!假一罚十!
ROHM/罗姆
21+
SOT-363-6
51000
只做原装,假一罚十
ROHM/罗姆
23+
15
33500
全新进口原装现货,假一罚十

UMT芯片相关品牌

  • AAC
  • AITSEMI
  • Atmel
  • BITECH
  • DBLECTRO
  • HUAXINAN
  • MOLEX3
  • Nuvoton
  • OSRAM
  • RECOM
  • SIEMENS
  • WILLOW

UMT数据表相关新闻