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UMT晶体管资料
UMT1006别名:UMT1006三极管、UMT1006晶体管、UMT1006晶体三极管
UMT1006生产厂家:
UMT1006制作材料:Si-NPN
UMT1006性质:
UMT1006封装形式:
UMT1006极限工作电压:300V
UMT1006最大电流允许值:10A
UMT1006最大工作频率:<1MHZ或未知
UMT1006引脚数:
UMT1006最大耗散功率:100W
UMT1006放大倍数:
UMT1006图片代号:NO
UMT1006vtest:300
UMT1006htest:999900
- UMT1006atest:10
UMT1006wtest:100
UMT1006代换 UMT1006用什么型号代替:3DK308A,
UMT价格
参考价格:¥0.3850
型号:UMT0G101MDD 品牌:Nichicon 备注:这里有UMT多少钱,2024年最近7天走势,今日出价,今日竞价,UMT批发/采购报价,UMT行情走势销售排行榜,UMT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
UMT | Surface Mount Fuse, 10.1 x 3 mm, Time-Lag T, 250 VAC, 125 VDC 文件:546.75 Kbytes Page:3 Pages | SCHURTERSchurter Inc. 硕特硕特集团 | ||
General Purpose Transistor (Isolated Dual Transistors) Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Dual Transistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Two2SA1037AKchipsinapackage •MountingpossiblewithSOT-363automaticmountingmachines. •Transistorelementsareindependent,eliminatinginterference. •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHS | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
-0.15A , -60V Dual PNP General Purpose Transistors FEATURES ●Two2SA1037AKchipsinapackage. ●MountingpossiblewithSOT-363automaticmountingmachines. ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareacanbecutinhalf. | SECOS SeCoS Halbleitertechnologie GmbH | |||
Dual General Purpose Transistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | FS First Silicon Co., Ltd | |||
General Purpose Transistor (Isolated Dual Transistors) Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
DUAL TRANSISTOR (PNPPNP) DUALTRANSISTOR(PNP+PNP) FEATURES ●Two2SA1037AKchipsinapackage ●MountingpossiblewithSOT-363automaticmountingmachines. ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareabecutinhalf. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
General Purpose Transistor Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General Purpose Transistor (Isolated Dual Transistors) Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
GENERAL PURPOSE TRANSISTOR DESCRIPTION TheUTCUMT1Nisadualtransistor,includingtwoPNPtransistors.ItusesUTC’sadvancedtechnologytoprovidethecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(hFE>120@VCE=-6V,IC=-1mA) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
GENERAL PURPOSE TRANSISTOR DESCRIPTION TheUTCUMT1Nisadualtransistor,includingtwoPNPtransistors.ItusesUTC’sadvancedtechnologytoprovidethecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(hFE>120@VCE=-6V,IC=-1mA) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
GENERAL PURPOSE TRANSISTOR DESCRIPTION TheUTCUMT1Nisadualtransistor,includingtwoPNPtransistors.ItusesUTC’sadvancedtechnologytoprovidethecustomerswithhighDCcurrentgain,etc. FEATURES *HighDCcurrentgain(hFE>120@VCE=-6V,IC=-1mA) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
General Purpose Transistor Features 1)Two2SA1037AKchipsinaEMT,UMTorSMTpackage. 2)MountingpossiblewithEMT3,UMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application GENERALPURPOSESMALLSIGNALA | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Dual Transistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Two2SA1037AKchipsinapackage •MountingpossiblewithSOT-363automaticmountingmachines. •Transistorelementsareindependent,eliminatinginterference. •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHS | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
NPN Medium Power Transistor (Switching) Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPN Medium Power Transistor (Switching) Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPN Medium Power Transistor (Switching) Features 1)BVCEO>40V(IC=10mA) 2)ComplementstheUMT2907A/SST2907A/MMST2907A/PN2907A. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS DESCRIPTION CPClare’sPMT(275)andUMT(275)Seriessurgeprotectors(350-500Vand550-2500Vrespectively)provideahighlevelofprotectionfromhigh-speed,high-currenttransientsurges.Thesedevicesareconstructedusingaproprietarysemiconductorjunctionprocesswhichresultsinnanosecon | ClareClare Inc. Clare Inc. | |||
PNP Medium Power Transistor (Switching) Features 1)BVCEO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP Medium Power Transistor (Switching) Features 1)BVCEO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP Medium Power Transistor (Switching) Features 1)BVCEO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General purpose (dual transistors) Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General purpose (dual transistors) Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General purpose (dual transistors) Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General purpose (dual transistors) Generalpurpose(dualtransistors) Features 1)Two2SA1037AKchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPN General Purpose Transistor Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPN General Purpose Transistor Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPN General Purpose Transistor Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT3906/SST3906/MMST3906 /2N3906. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP General Purpose Transistor Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP General Purpose Transistor Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP General Purpose Transistor Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP General Purpose Transistor Features 1)BVCEO>−40V(IC=−1mA) 2)ComplementstheUMT3904/SST3904/MMST3909/2N3904. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPN Medium Power Transistor •Features 1)BVCEO>40V(IC=1mA) 2)ComplementstheUMT4403/SST4403/MMST4403/PN4403. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP Medium Power Transistor (Switching) Features 1)BVCEO | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Power management Features 1)BoththeDTA143XchipandDTC144EchipinaEMT orUMTorSMTpackage. 2)Idealforpowerswitchcircuits. 3)Mountingcostandareacanbecutinhalf. Structure Epitaxialplanartype NPN/PNPsilicontransistor(Built-inresistortype.) | TGS Tiger Electronic Co.,Ltd | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
封装/外壳:径向,Can 包装:散装 描述:CAP ALUM 100UF 20% 4V RADIAL 电容器 铝电解电容器 | nichiconNichicon 尼吉康尼吉康株式会社 | |||
封装/外壳:径向,Can 包装:散装 描述:CAP ALUM 100UF 20% 4V RADIAL 电容器 铝电解电容器 | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 | |||
ALUMINUM ELECTROLYTIC CAPACITORS 文件:87.45 Kbytes Page:1 Pages | nichiconNichicon 尼吉康尼吉康株式会社 |
UMT产品属性
- 类型
描述
- 型号
UMT
- 制造商
SCHURTER
- 制造商全称
Schurter Inc.
- 功能描述
Surface Mount Fuse, 10.1 x 3 mm, Time-Lag T, 250 VAC, 125 VDC
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
23+ |
SOT-323 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ROHM/罗姆 |
21+ |
SOT-323 |
60000 |
绝对原装正品现货,假一罚十 |
|||
Micro Commercial Co |
24+ |
6-TSSOP,SC-88,SOT-363 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ROHM(罗姆) |
22+ |
SOT-363 |
45000 |
100%公司原装现货,欢迎加Q微信咨询 |
|||
ROHM |
21+ |
SOT-363 |
21000 |
全新原装 鄙视假货15118075546 |
|||
ROHM |
21+ |
SOT323 |
48000 |
全新、原装、现货
|
|||
ROHM |
SOT-363 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
NICHICON |
23+ |
DIP |
4000 |
原装正品!假一罚十! |
|||
ROHM/罗姆 |
21+ |
SOT-363-6 |
51000 |
只做原装,假一罚十 |
|||
ROHM/罗姆 |
23+ |
15 |
33500 |
全新进口原装现货,假一罚十 |
UMT规格书下载地址
UMT参数引脚图相关
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