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TN25价格
参考价格：￥5.5290
型号：TN25/15/10-3E25 品牌：FERROXCUBE 备注：这里有TN25多少钱，2024年最近7天走势，今日出价，今日竞价，TN25批发/采购报价，TN25行情走势销售排行榜，TN25报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TN25 | 25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
TN25 | 25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc |  | | |
N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription TheSupertexTN2529isalowthresholdenhancementmodetransistorthatutilizesanadvancedverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,an | SUTEX Supertex, Inc | | | |
Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription TheSupertexTN2529isalowthresholdenhancementmodetransistorthatutilizesanadvancedverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,an | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription TheSupertexTN2540isalowthresholdenhancementmodetransistorthatutilizesanadvancedverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors, | SUTEX Supertex, Inc | | | |
Standard 25 A SCRs Description Thesestandard25ASCRsaresuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. Features ■On-statermscurrent,IT(RMS)25A ■Repetitivepeakoff-statevoltage,VDRM/VRRM600to | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Standard SCR, D²PAK, 25 A, 1200 V Features •Max.blockingvoltage=VDRM,VRRM=1200V •IGTmaximum=40mA •HighstaticanddynamiccommutationatTj=125°C –dl/dt=50A/μs –dV/dt=1500V/μs •ECOPACK®2compliant(RoHSandHFcompliance) Applications •Solar •Windrenewableenergyinverters •SolidStateRela | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Standard SCR, D²PAK, 25 A, 1200 V Features •Max.blockingvoltage=VDRM,VRRM=1200V •IGTmaximum=40mA •HighstaticanddynamiccommutationatTj=125°C –dl/dt=50A/μs –dV/dt=1500V/μs •ECOPACK®2compliant(RoHSandHFcompliance) Applications •Solar •Windrenewableenergyinverters •SolidStateRela | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
SCR DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Standard 25 A SCRs Description Thesestandard25ASCRsaresuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. Features ■On-statermscurrent,IT(RMS)25A ■Repetitivepeakoff-statevoltage,VDRM/VRRM600to | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Standard 25 A SCRs Description Thesestandard25ASCRsaresuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. Features ■On-statermscurrent,IT(RMS)25A ■Repetitivepeakoff-statevoltage,VDRM/VRRM600to | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
SCR DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Standard 25 A SCRs Description Thesestandard25ASCRsaresuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. Features ■On-statermscurrent,IT(RMS)25A ■Repetitivepeakoff-statevoltage,VDRM/VRRM600to | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Standard 25 A SCRs Description Thesestandard25ASCRsaresuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. Features ■On-statermscurrent,IT(RMS)25A ■Repetitivepeakoff-statevoltage,VDRM/VRRM600to | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
SCR DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription TheSupertexTN2540isalowthresholdenhancementmodetransistorthatutilizesanadvancedverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors, | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription TheSupertexTN2540isalowthresholdenhancementmodetransistorthatutilizesanadvancedverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors, | SUTEX Supertex, Inc | | | |
N-Channel Enhancement-Mode Vertical DMOS FETs GeneralDescription TheSupertexTN2540isalowthresholdenhancementmodetransistorthatutilizesanadvancedverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors, | SUTEX Supertex, Inc | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
25A SCRs DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Ferrite toroids 文件：44.73 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞磁 |  | | |
Ferrite toroids 文件：44.73 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞磁 | | | |
Ferrite toroids 文件：44.73 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞磁 | | | |
Ferrite toroids 文件：44.73 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞磁 | | | |
Ferrite toroids 文件：44.73 Kbytes Page：3 Pages | FERROXCUBEFERROXCUBE INC. 飞磁 | | | |
25A SCRS 文件：91.53 Kbytes Page：7 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：464.31 Kbytes Page：14 Pages | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：464.31 Kbytes Page：14 Pages | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：768.91 Kbytes Page：14 Pages | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
N-Channel Enhancement-Mode Vertical DMOS FET 文件：768.91 Kbytes Page：14 Pages | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | |
TN25产品属性
- 类型
描述
- 型号
TN25
- 制造商
Panasonic Electric Works
- 功能描述
RELAY POLARISE 2RT 5V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEXI |
23+ |
SOT89 |
63000 |
原装正品现货 |
|||
ST/意法半导体 |
2023 |
D2PAK-2 (TO-263-2) |
6000 |
公司原装现货/支持实单 |
|||
ST/意法 |
17+ |
D2PAKCLIP |
31518 |
原装正品 可含税交易 |
|||
SUPERTEX |
22+ |
SOT-89 |
10000 |
绝对原装现货热卖 |
|||
Microchip Technology |
23+ |
TO-92-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Supertex |
2020+ |
SOT-89 |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
23+ |
N/A |
85700 |
正品授权货源可靠 |
||||
MICROCHIP/微芯 |
21+ |
18 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
|||
SUPERTEX |
23+ |
SOT89 |
50000 |
原装正品 支持实单 |
|||
MICROCHIP |
2023+ |
SMD |
3728 |
原装现货热卖,安罗世纪电子只做原装 |
TN25芯片相关品牌
TN25规格书下载地址
TN25参数引脚图相关
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- TN2460L
- TN2460
- TN2435N8-G
- TN2435
- TN2425N8-G
- TN2425
- TN2410L
- TN2404K-T1-GE3
- TN2404K-T1-E3
- TN2404K
- TN2-4.5V
- TN2-3V
- TN23/14/7-4C65
- TN23/14/7-3E25
- TN22-T
- TN22-H
- TN22-B
- TN2-24V
- TN2222A
- TN2219A
- TN22-1500T
- TN22-1500H
- TN22-1500B-TR
- TN22_05
- TN2130K1-G
- TN2130
- TN2-12V
- TN2124
- TN2-12
- TN2106N3-G
- TN2106K1-G
- TN2106
- TN20/10/7-3C90
- TN2
- TN18-WJ-XV
- TN1625-600G-TR
- TN1625-1000G-TR
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