位置：首页 > IC中文资料 > THS6186IRTJR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,33A,RDS(ON)=23mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,33A,RDS(ON)=20mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
PrecisionPotentiometer/PositionSensor 文件：417.4 Kbytes Page：3 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 |  | | |
0.5ADualUSBHigh-SidePowerSwitch 文件：222.45 Kbytes Page：9 Pages | AIC AIC |  | | |
High-SpeedUSB2.0(480Mbps)DPDTSwitch 文件：518.88 Kbytes Page：10 Pages | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
2105+ |
TO-263 |
12000 |
原装正品 |
|||
CET |
23+ |
TO263 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
CET |
360000 |
原厂原装 |
1305 |
||||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
VBsemi/台湾微碧 |
21+ |
T0-263 |
3031 |
原装现货假一赔十 |
|||
CET |
2201+ |
TO263 |
2190 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VBsemi |
2020+ |
T0-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
CET |
21+ |
TO263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi/台湾微碧 |
23+ |
T0-263 |
28000 |
原装正品 |
THS6186IRTJR芯片相关品牌
THS6186IRTJR规格书下载地址
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2022-2-25
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