P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD4189usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications. Features VDS(V)=-40V ID=-40A(VGS=-

P-Channel40V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested

iscP-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=-40A@TC=25℃ •DrainSourceVoltage- :VDSS=-40V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max) •100avalanchetested •MinimumLot-to-Lo

P-ChannelMOSFET

Features ●VDS(V)=-40V ●ID=-40A ●RDS(ON)

TheSTEVAL-CCA049V1isademonstrationboarddesignedfortheevaluation

文件：2.97755 Mbytes Page：23 Pages