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TC_P价格
参考价格：￥0.7150
型号：TC7PA04FU 品牌：TOSHIBA 备注：这里有TC_P多少钱，2024年最近7天走势，今日出价，今日竞价，TC_P批发/采购报价，TC_P行情走势销售排行榜，TC_P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TC_P | Chip tantalum capacitors 文件：102.38 Kbytes Page：12 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  |   |
TC_P | Chip tantalum capacitors 文件：151.74 Kbytes Page：8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic DualInverter Features •Operatingvoltagerange:VCC=1.8~3.6V •High-speedoperation: tpd=2.8ns(max)atVCC=3.0~3.6V tpd=3.7ns(max)atVCC=2.3~2.7V tpd=7.4ns(max)atVCC=1.8V •High-leveloutputcurrent: IOH/IOL=±24mA(min)atVCC=3.0V IOH/IOL | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •2DifferentialChannel,2:1multiplexer/demultiplexerswitchforPCIExpressGen3 2.General TheTC7PCI3212MTandTC7PCI3215MTare2differentialchannel,1-2multiplexer/demultiplexerforPCI ExpressGen3(8Gbps),orotherhigh-speedinterfaceapplications. TheAn | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •2DifferentialChannel,2:1multiplexer/demultiplexerswitchforPCIExpressGen3 2.General TheTC7PCI3212MTandTC7PCI3215MTare2differentialchannel,1-2multiplexer/demultiplexerforPCI ExpressGen3(8Gbps),orotherhigh-speedinterfaceapplications. TheAn | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Schmitt Buffer Features •Highoutputcurrent:±8mA(min)atVCC=3.0V •Superhighspeedoperation:tpd=3.7ns(typ.) atVCC=3.3V,15pF •Operatingvoltagerange:VCC=0.9to3.6V •5.5-Vtolerantinputs | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Schmitt Buffer Features •Highoutputcurrent:±8mA(min)atVCC=3V •Superhighspeedoperation:tpd=3.7ns(typ.) atVCC=3.3V,15pF •Operatingvoltagerange:VCC=0.9to3.6V •5.5-Vtolerantinputs •3.6-Vpowerdownprotectionoutputs | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter (Un-Buffer) Features •Highoutputcurrent:±8mA(min) atVCC=3.0V •Superhighspeedoperation:tpd=1.9ns(typ.) atVCC=3.3V,15pF •Operatingvoltagerange:VCC=0.9to3.6V •3.6-Vtolerantinputs | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •DualInverter 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highoutputcurrent:±24mA(min)atVCC=3.0V (4)Superhighspeedoperation:tpd=2.4ns(typ.)atVCC=5.0V,CL=50pF (5)Ope | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •DualInverter(OpenDrain) 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highoutputcurrent:±24mA(min)atVCC=3.0V (4)Superhighspeedoperation:tPZL=2.3ns(typ.)atVCC=5.0V,CL= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •DualNon-Inverter(OpenDrain) 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highoutputcurrent:±24mA(min)atVCC=3.0V (4)Superhighspeedoperation:tPZL=2.3ns(typ.)atVCC=5.0V,C | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •DualSchmittInverter 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highoutputcurrent:±24mA(min)atVCC=3.0V (4)Superhighspeedoperation:tpd=3.7ns(typ.)atVCC=5.0V,CL=50pF | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •DualSchmittBuffer 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highoutputcurrent:±24mA(min)atVCC=3.0V (4)Superhighspeedoperation:tpd=3.7ns(typ.)atVCC=5.0V,CL=50pF ( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuits Silicon Monolithic 1.FunctionalDescription •DualNon-Inverter 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highoutputcurrent:±24mA(min)atVCC=3.0V (4)Superhighspeedoperation:tpd=2.4ns(typ.)atVCC=5.0V,CL=50pF (5) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
USB Type-C™ protection for source application Features ExternallyprogrammableVBUSovercurrentprotection(OCP) IntegratedchargepumpandgatedriverforexternalN-channelMOSFET VBUScurrentsenseandamplifierwithanalogoutput IntegrateddischargeonVBUSandVCONN Overtemperatureprotection Overvoltageprotection(OVP)onCC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
USB Type-C™ protection for source application Features ExternallyprogrammableVBUSovercurrentprotection(OCP) IntegratedchargepumpandgatedriverforexternalN-channelMOSFET VBUScurrentsenseandamplifierwithanalogoutput IntegrateddischargeonVBUSandVCONN Overtemperatureprotection Overvoltageprotection(OVP)onCC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
USB Type-C™ protection for source application Features ExternallyprogrammableVBUSovercurrentprotection(OCP) IntegratedchargepumpandgatedriverforexternalN-channelMOSFET VBUScurrentsenseandamplifierwithanalogoutput IntegrateddischargeonVBUSandVCONN Overtemperatureprotection Overvoltageprotection(OVP)onCC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Chip tantalum capacitors ●Features 1)Newbottomelectrodeconfigurationresultsingreatercompactness,lowprofile,andhighercapacitance. 2)Compact,lowprofile,ultra-highcapacitancecontributetosmaller,thinnersetswithgreaterfunctionality. 3)Idealfornoiseremovalonpowersupplylineswithlimitedspac | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Chip tantalum capacitors ●Features 1)Newbottomelectrodeconfigurationresultsingreatercompactness,lowprofile,andhighercapacitance. 2)Compact,lowprofile,ultra-highcapacitancecontributetosmaller,thinnersetswithgreaterfunctionality. 3)Idealfornoiseremovalonpowersupplylineswithlimitedspac | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Chip tantalum capacitors ●Features 1)Newbottomelectrodeconfigurationresultsingreatercompactness,lowprofile,andhighercapacitance. 2)Compact,lowprofile,ultra-highcapacitancecontributetosmaller,thinnersetswithgreaterfunctionality. 3)Idealfornoiseremovalonpowersupplylineswithlimitedspac | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Chip tantalum capacitors ●Features 1)Newbottomelectrodeconfigurationresultsingreatercompactness,lowprofile,andhighercapacitance. 2)Compact,lowprofile,ultra-highcapacitancecontributetosmaller,thinnersetswithgreaterfunctionality. 3)Idealfornoiseremovalonpowersupplylineswithlimitedspac | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Chip tantalum capacitors ●Features 1)Newbottomelectrodeconfigurationresultsingreatercompactness,lowprofile,andhighercapacitance. 2)Compact,lowprofile,ultra-highcapacitancecontributetosmaller,thinnersetswithgreaterfunctionality. 3)Idealfornoiseremovalonpowersupplylineswithlimitedspac | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Chip tantalum capacitors 文件：151.74 Kbytes Page：8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
Dual Inverter 文件：184.07 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter 文件：184.07 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 文件：181.21 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter (Open Drain) 文件：184.08 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter (Open Drain) 文件：184.08 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Schmitt Inverter 文件：186.84 Kbytes Page：9 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
D-Type Flip-Flop with Clear 文件：190.42 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Schmitt Buffer 文件：184.49 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
CMOS Digital Integrated Circuit Silicon Monolithic 文件：204.59 Kbytes Page：7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Chip Select Decoder 文件：180.9 Kbytes Page：7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Chip Select Decoder 文件：180.9 Kbytes Page：7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Chip Select Decoder 文件：178.5 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Non-Invert Buffer with 3.6 V Tolerant Input and Output 文件：148.29 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Non-Invert Buffer with 3.6 V Tolerant Input and Output 文件：197.26 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Non-Invert Buffer with 3.6 V Tolerant Input and Output 文件：197.26 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
2-Channel Multiplexer/Demultiplexer 文件：163.09 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 文件：126.19 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
2-Channel Multiplexer/Demultiplexer 文件：163.09 Kbytes Page：8 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter (unbuffer) with 3.6 V Tolerant Input 文件：152.8 Kbytes Page：7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter (unbuffer) with 3.6 V Tolerant Input 文件：195.4 Kbytes Page：7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter (unbuffer) with 3.6 V Tolerant Input 文件：195.4 Kbytes Page：7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Single 1-of-2 Demultiplexer with N-channel pull-down MOSFET 文件：170.16 Kbytes Page：7 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Single 1-of-3 Demultiplexer with N-channel pull-down MOSFET 文件：205.36 Kbytes Page：9 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Single 1-of-3 Demultiplexer with N-channel pull-down MOSFET 文件：205.36 Kbytes Page：9 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
封装/外壳：20-UFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC MUX/DEMUX QUAD 1:2 20TQFN 集成电路（IC） 模拟开关 - 特殊用途 | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage |  | | |
封装/外壳：20-UFQFN 裸露焊盘 包装：管件 描述：IC MUX/DEMUX 2:1 DIFF PCI 20TQFN 集成电路（IC） 模拟开关 - 特殊用途 | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage | | | |
Dual Inverter 文件：141.53 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 文件：157.97 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual NON-Inverter 文件：141.06 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 文件：158.3 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual Inverter 文件：182.8 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 文件：175.54 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Dual NON-Inverter 文件：182.32 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 文件：180.25 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
8-bit OTP ROM microcontroller 文件：1.30037 Mbytes Page：29 Pages | FUMANSHENZHEN FUMAN ELECTRONICS CO., LTD. 富满微电子深圳市富满微电子集团股份有限公司 |  | | |
Tantalum Solid Electrolytic Chip Capacitors with Conductive Polymer Electrode 文件：202.56 Kbytes Page：4 Pages | AVXAVX Corporation 艾维克斯 |  | | |
Tantalum Solid Electrolytic Chip Capacitors with Conductive Polymer Electrode 文件：118.06 Kbytes Page：4 Pages | AVXAVX Corporation 艾维克斯 | | |
TC_P产品属性
- 类型
描述
- 型号
TC_P
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
Chip tantalum capacitors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LUQIN |
新批次 |
BGA |
3000 |
||||
ROHM |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
TOSHIBA/东芝 |
21+ |
SOT363 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
TOSHIBA/东芝 |
SC705 |
7906200 |
|||||
TOSH |
2023+ |
DIP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
ROHM |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
ROHM |
22+ |
SMD |
20000 |
十年沉淀唯有原装 |
|||
TOSHIBA |
22+ |
SOT-363 |
4500 |
原装正品!现货热卖! |
|||
雄美 |
21+ |
20 |
全新原装鄙视假货15118075546 |
||||
ROHM |
19+ |
SMD |
46890 |
TC_P芯片相关品牌
TC_P规格书下载地址
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2019-11-2TC1014-50毫安CMOS LDO稳压器关断和参考旁路
一般说明TC1014是一个高准确度（通常为±0.5％）CMOS（双极），如低压差稳压器升级LP2980。专为电池供电系统的，TC1014的CMOS结构消除浪费接地电流，显着延长电池寿命。共有电源电流通常是在满负荷（50毫安20至60倍低于双极型稳压器）。TC1014的主要特性包括超低噪声操作（加上可选的旁路输入）;非常低的压差电压（在满负荷通常95mV）和内部前馈补偿快速响应，以加强对负荷变化。供应当关断输入电流减少到小于1mA低。TC1014还结合过温和过电流保护。TC1014是稳定，只有一个输出电容1MF和最大输出电流为100mA。对于高输出版本，请参阅TC1107，
2013-1-11
DdatasheetPDF页码索引
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