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位置：首页 > IC中文资料第7013页 > T431616D

型号 功能描述 生产厂家&企业 LOGO 操作
T431616D

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-5C

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-5CG

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-5S

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-5SG

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-6C

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-6CG

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-6S

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-6SG

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-7C

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-7CG

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-7S

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616D-7SG

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616A

1Mx16SDRAM????

GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616B

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616Bis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616C

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616Cis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleon

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT
T431616E

1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM

GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

T431616D产品属性

  • 类型

    描述

  • 型号

    T431616D

  • 制造商

    TMT

  • 制造商全称

    TMT

  • 功能描述

    1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

T431616D供应商更多...

更新时间：2024-6-2 8:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市维尔达电子有限公司
T431A
2023+
SSOP8
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市得捷芯城科技有限公司
T431A
TI有量
23+
NA/
3505
原厂直销,现货供应,账期支持!
询价
上海意淼电子科技有限公司
T431A
TI
23+
MSOP8
20000
全新原装假一赔十
询价
瀚佳科技(深圳)有限公司
T431S
EUPEC
16+
MODULE
2100
公司大量全新现货 随时可以发货
询价
中科航电（深圳）电子集团有限公司
T431A
原厂
N/A
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
深圳市科恒伟业电子有限公司
T431AC
TI
1738+
TO-92
8529
科恒伟业!只做原装正品,假一赔十!
询价
上海金庆电子技术有限公司
T431C226K016AS
KEMET
新
100
全新原装 货期两周
询价
深圳市勤思达科技有限公司
T431A
TI
23+
TSOP8
1520
询价
深圳市一线半导体有限公司
T431A
TI
06+
SSOP8
182
询价
深圳市创新迹电子有限公司
T431A
TI/德州仪器
22+
MSOP8
25000
只做原装,原装,假一罚十
询价

T431616D芯片相关品牌

  • ADAM-TECH
  • ECS
  • EDAC
  • grayhill
  • Intel
  • KODENSHI
  • MEDER
  • MPD
  • OSCILENT
  • RENCO
  • SEI
  • TAI-SAW

T431616D规格书下载地址

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T431616D数据表相关新闻

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