NPN/PNPEpitaxialPlanarSiliconTransistor

Descriptions •Generalpurposetransistor Features •Both2SA1980chipand2SC5343chipinSOT-25package

EpitaxialplanarPNP/NPNsilicontransistor

Descriptions •Complextypebipolartransistor Features •Reducequantityofpartsandmountingcost •Highcollectorpowerdissipation:PC=300mW(Max.) •Both2SA1980chipand2SC5343chipinSOT-25package

464SeriesEdgeConnector|DIN41612

Features Highdensity64Contacts2RowsMetal-to-MetalConnectoron2.54mm(.100”)Grid ContactMaterial:CopperAlloywithselectivegoldplatingandtinontails: CLASS3:2-GoldFlashPlating CLASS2

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD464usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceissuitableforuseinhighvoltagesynchronousrectification,loadswitchingandgeneralpurposeapplications.StandardProductAOD464isPb-free(meetsROHS

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=40A@TC=25℃ •DrainSourceVoltage- :VDSS=105V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max) •100avalanchetested •MinimumLot-to-L

Superiorvideoperformance,4-channelindustrialvideoencoders

文件：730.48 Kbytes Page：5 Pages

SurfaceMountFuses-SubminiatureSurfaceMount

文件：56.54 Kbytes Page：1 Pages