STS4晶体管资料

  • STS401别名:STS401三极管、STS401晶体管、STS401晶体三极管

  • STS401生产厂家

  • STS401制作材料:Si-NPN

  • STS401性质:功率开关 (PSW)

  • STS401封装形式:直插封装

  • STS401极限工作电压:400V

  • STS401最大电流允许值:2A

  • STS401最大工作频率:<1MHZ或未知

  • STS401引脚数:2

  • STS401最大耗散功率:75W

  • STS401放大倍数:β=20-100

  • STS401图片代号:E-44

  • STS401vtest:400

  • STS401htest:999900

  • STS401atest:2

  • STS401wtest:75

  • STS401代换 STS401用什么型号代替:3DK309B,

STS4价格

参考价格:¥1.5480

型号:STS4DNF60L 品牌:STMicroelectronics 备注:这里有STS4多少钱,2024年最近7天走势,今日出价,今日竞价,STS4批发/采购报价,STS4行情走势销售排行榜,STS4报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

GeneralDescription TheSTS4xisafullydigitaltemperaturesensorplatformofferingdifferentaccuracyclasses, currentlyavailableistheSTS40.TheI2CinterfaceprovidesmultiplepreconfiguredI2C addressesandenablesanultra-lowpowerbudget.Designedtocost,thisfour-pindual-flatno-

SensirionSensirion AG

盛思锐盛思锐贸易有限公司

Sensirion

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

GeneralDescription TheSTS4xisafullydigitaltemperaturesensorplatformofferingdifferentaccuracyclasses, currentlyavailableistheSTS40.TheI2CinterfaceprovidesmultiplepreconfiguredI2C addressesandenablesanultra-lowpowerbudget.Designedtocost,thisfour-pindual-flatno-

SensirionSensirion AG

盛思锐盛思锐贸易有限公司

Sensirion

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

GeneralDescription TheSTS4xisafullydigitaltemperaturesensorplatformofferingdifferentaccuracyclasses, currentlyavailableistheSTS40.TheI2CinterfaceprovidesmultiplepreconfiguredI2C addressesandenablesanultra-lowpowerbudget.Designedtocost,thisfour-pindual-flatno-

SensirionSensirion AG

盛思锐盛思锐贸易有限公司

Sensirion

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

Samhop

三合微科

Samhop

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P -Channel E nhancement Mode F ield E ffect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23Package.

Samhop

三合微科

Samhop

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Dual N-Channel Enhancement Mode Field E ffect Trans is tor

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

Samhop

三合微科

Samhop

Dual N-Channel 40 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFETPowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •CCFLInverter •DC/DCConverter •HDD

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

StripFET??MOSFET

DESCRIPTION ThisMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET??POWER MOSFET

Description TheSTS4DNF60LisadualN-channelSTripFETTMPowerMOSFETrealizedwiththesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristics

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier

Description ThisproductassociatesthelatestlowvoltageSTripFET™inn-channelversiontoalowdropSchottkydiode.SuchconfigurationisextremelyversatileinimplementingalargevarietyofDC-DCconvertersforprinters,portableequipment. Applications ■Switchingapplication

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET??II MOSFET PLUS SCHOTTKY RECTIFIER

Description ThisproductassociatesthelatestlowvoltageSTripFET™inn-channelversiontoalowdropSchottkydiode.Suchconfigurationisextremelyversatileinimplementing,alargevarietyofDCDCconvertersforprinters,portableequipment,andcellularphones. Applications ■Switchinga

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET??POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET??POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Dual P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION ThisproductassociatesthelatestlowvoltageSTripFET™inp-channelversiontoalowdropSchottkydiode.Suchconfigurationisextremelyversatileinimplementing,alargevarietyofDC-DCconvertersforprinters,portableequipment,andcellularphones.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION ThisproductassociatesthelatestlowvoltageSTripFET™inp-channelversiontoalowdropSchottkydiode.Suchconfigurationisextremelyversatileinimplementing,alargevarietyofDC-DCconvertersforprinters,portableequipment,andcellularphones.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION ThisproductassociatesthelatestlowvoltageSTripFET™inp-channelversiontoalowdropSchottkydiode.Suchconfigurationisextremelyversatileinimplementing,alargevarietyofDC-DCconvertersforprinters,portableequipment,andcellularphones.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET??II POWER MOSFET

DESCRIPTION ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersforTelecomandCo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-Channel 100 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel 100 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P-CHANNEL 20V - 0.090 ohm - 4A SO- 2.7V-DRIVE STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IP67 SURFACE MOUNT GULL WING TAC 开关 触摸开关

CIT Relay and Switch

CIT Relay and Switch

CIT Relay and Switch

Surface Mount Process Sealed Tactile

文件:264.93 Kbytes Page:2 Pages

CITCIT

CIT

CIT

Connects legacy serial devices to 10/100Base-T Ethernet network.

文件:344.24 Kbytes Page:2 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子(上海)有限公司

DBLECTRO

Secure Terminal Server with PCMCIA,

文件:627.19 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

封装/外壳:4-UDFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIGITAL TEMPERATURE SENSOR 传感器,变送器 温度传感器 - 模拟和数字输出

SensirionSensirion AG

盛思锐盛思锐贸易有限公司

Sensirion

N-channel 30V - 0.044廓 - 5A - SO-8 STripFET??Power MOSFET

文件:392.65 Kbytes Page:14 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N- and P-Channel 30 V (D-S) MOSFET

文件:1.13459 Mbytes Page:14 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Dual N-channel 30V - 0.039ohm - 4A SO-8 STripFET TM Power MOSFET

文件:330.9 Kbytes Page:12 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Dual N-Channel 30-V (D-S) MOSFET

文件:924.13 Kbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Dual N-channel 30V - 0.039ohm - 4A SO-8 STripFET TM Power MOSFET

文件:330.9 Kbytes Page:12 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier

文件:290.04 Kbytes Page:12 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier

文件:290.04 Kbytes Page:12 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Dual P-Channel MOSFET uses advanced trench technology

文件:1.33598 Mbytes Page:5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

STS4产品属性

  • 类型

    描述

  • 型号

    STS4

  • 制造商

    Phoenix Contact

  • TB,Spring-cage,Width

    6.2 mm,grey

更新时间:2024-6-12 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUNLINK
2016+
SOP
8850
只做原装,假一罚十,公司专营变压器,滤波器!
INFINEO
2020+
SOP8
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SAMHOP/三合微科
2022+
SOT-23
30000
进口原装现货供应,绝对原装 假一罚十
SUNLINK
1736+
SOP
15238
原厂优势渠道
ST
原厂原封
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
ON
2023+
SOT23
700000
柒号芯城跟原厂的距离只有0.07公分
VBSEMI
19+
SOT-23
29600
绝对原装现货,价格优势!
SAMHOP
2315+
SOT23-3
3008
优势代理渠道,原装现货,可全系列订货
SUMLINK
24+25+/26+27+
SOP-16
12680
一一有问必回一特殊渠道一有长期订货一备货HK仓库
INFINEON/英飞凌
SOP8
265209
假一罚十,原包原标签,常备现货

STS4芯片相关品牌

  • EON
  • Fairchild
  • FRONTIER
  • GigaDevice
  • JAUCH
  • KEC
  • KEYSIGHT
  • LIGITEK
  • MINI
  • OMRON
  • QUALTEK
  • SENSITRON

STS4数据表相关新闻