N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERR

300VN-ChannelMOSFET

Features •5.4A,300V,RDS(on)=0.9Ω@VGS=10V •Lowgatecharge(typical9.8nC) •LowCrss(typical9.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.4A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

300VN-ChannelMOSFET

300VN-ChannelMOSFET

300VN-ChannelMOSFET

Features •5.4A,300V,RDS(on)=0.9Ω@VGS=10V •Lowgatecharge(typical9.8nC) •LowCrss(typical9.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FastSwitchingSpeed

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