位置：首页 > IC中文资料第1239页 > STP5N120
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5N120 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
STP5N120 | N-channel1200V-2.8廓-4.4A-TO-220Zener-protectedSuperMESHTMPowerMOSFET 文件：186.55 Kbytes Page：10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
5A,1200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A *LowReverseTransferCapacitance *FastSwitchingCapabilit | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
STP5N120产品属性
- 类型
描述
- 型号
STP5N120
- 功能描述
MOSFET N-Ch, 1200V-2.8ohms 4.4A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
17+ |
TO-220 |
4000 |
原装现货热卖 |
|||
ST/意法 |
21+ |
TO220F |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
22+ |
TO-220 |
100261 |
终端免费提供样品 可开13%增值税发票 |
|||
ST |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
|||
STM原厂目录 |
23+ |
TO-220 |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|||
ST |
TO-220 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
2023+ |
TO-220 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
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DdatasheetPDF页码索引
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