位置：首页 > IC中文资料第637页 > STP55NE06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP55NE06 | N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
STP55NE06 | N-Channel60V(D-S)MOSFET 文件：1.31569 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandless | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandless | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel60-V(D-S)MOSFET 文件：950.76 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODE??SINGLEFEATURESIZE??POWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODESINGLEFEATURESIZEPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkablema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP55NE06产品属性
- 类型
描述
- 型号
STP55NE06
- 功能描述
MOSFET TO-220 N-CH 55A 60V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
|||
ST/意法 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法 |
21+ |
65230 |
|||||
STP55NE06 |
7000 |
7000 |
|||||
ST/意法 |
TO-220-3 |
265209 |
假一罚十,原包原标签,常备现货 |
||||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ST |
TO-220 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST |
N/A |
2000 |
|||||
ST/意法 |
23+ |
FET-TO220 |
880000 |
明嘉莱只做原装正品现货 |
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STP55NE06规格书下载地址
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STP45N10，STP45N10FI，STP45NE06，STP45NE06FP，STP45NE06L
2020-3-12
DdatasheetPDF页码索引
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